Elimination of Titanium Nitride Cracking Using Stress Alleviating Ti Buffer Layers

Terry Alford (Inventor)

Research output: Patent

Abstract

Titanium Nitride (TiN) is necessary as a diffusion barrier for different interconnect systems in metalization schemes of modern integrated circuits. A major disadvantage of TiN, however, is its brittle and hard nature which results in cracks in the film due to large residual stresses generated at the interface of TiN and the substrate. Researchers at Arizona State University have discovered how to eliminate Titanium Nitride cracking allowing integration of both copper and silver metalization.
Original languageEnglish (US)
StatePublished - Mar 27 2001

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Titanium nitride
Buffer layers
Diffusion barriers
Integrated circuits
Residual stresses
Silver
Cracks
Copper
Substrates

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abstract = "Titanium Nitride (TiN) is necessary as a diffusion barrier for different interconnect systems in metalization schemes of modern integrated circuits. A major disadvantage of TiN, however, is its brittle and hard nature which results in cracks in the film due to large residual stresses generated at the interface of TiN and the substrate. Researchers at Arizona State University have discovered how to eliminate Titanium Nitride cracking allowing integration of both copper and silver metalization.",
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AB - Titanium Nitride (TiN) is necessary as a diffusion barrier for different interconnect systems in metalization schemes of modern integrated circuits. A major disadvantage of TiN, however, is its brittle and hard nature which results in cracks in the film due to large residual stresses generated at the interface of TiN and the substrate. Researchers at Arizona State University have discovered how to eliminate Titanium Nitride cracking allowing integration of both copper and silver metalization.

M3 - Patent

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