Elimination of thickness dependence from medium resolution electron holograms

M. Gajdardziska-Josifovska, Martha McCartney

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

We show that a composition image that is independent of thickness can be obtained by suitably combining the phase and amplitude images extracted from an off-axis electron hologram. This image is the product of the mean inner potential of the material and the mean-free-path for inelastic scattering. The method used has been evaluated using single crystal Si wedges with known linearly increasing thickness, and it has then been applied to CoSi2/Si epitaxial interfaces with unknown thickness. Thickness independent images of Si show constant contrast while images of hetero interface emphasize compositional differences.

Original languageEnglish (US)
Pages (from-to)291-296
Number of pages6
JournalUltramicroscopy
Volume53
Issue number3
DOIs
StatePublished - 1994

Fingerprint

Inelastic scattering
Holograms
elimination
Single crystals
Electrons
Chemical analysis
electrons
image contrast
mean free path
wedges
inelastic scattering
single crystals
products

ASJC Scopus subject areas

  • Materials Science(all)
  • Instrumentation

Cite this

Elimination of thickness dependence from medium resolution electron holograms. / Gajdardziska-Josifovska, M.; McCartney, Martha.

In: Ultramicroscopy, Vol. 53, No. 3, 1994, p. 291-296.

Research output: Contribution to journalArticle

@article{270b9819cf604e9ba84eac62f50a4980,
title = "Elimination of thickness dependence from medium resolution electron holograms",
abstract = "We show that a composition image that is independent of thickness can be obtained by suitably combining the phase and amplitude images extracted from an off-axis electron hologram. This image is the product of the mean inner potential of the material and the mean-free-path for inelastic scattering. The method used has been evaluated using single crystal Si wedges with known linearly increasing thickness, and it has then been applied to CoSi2/Si epitaxial interfaces with unknown thickness. Thickness independent images of Si show constant contrast while images of hetero interface emphasize compositional differences.",
author = "M. Gajdardziska-Josifovska and Martha McCartney",
year = "1994",
doi = "10.1016/0304-3991(94)90041-8",
language = "English (US)",
volume = "53",
pages = "291--296",
journal = "Ultramicroscopy",
issn = "0304-3991",
publisher = "Elsevier",
number = "3",

}

TY - JOUR

T1 - Elimination of thickness dependence from medium resolution electron holograms

AU - Gajdardziska-Josifovska, M.

AU - McCartney, Martha

PY - 1994

Y1 - 1994

N2 - We show that a composition image that is independent of thickness can be obtained by suitably combining the phase and amplitude images extracted from an off-axis electron hologram. This image is the product of the mean inner potential of the material and the mean-free-path for inelastic scattering. The method used has been evaluated using single crystal Si wedges with known linearly increasing thickness, and it has then been applied to CoSi2/Si epitaxial interfaces with unknown thickness. Thickness independent images of Si show constant contrast while images of hetero interface emphasize compositional differences.

AB - We show that a composition image that is independent of thickness can be obtained by suitably combining the phase and amplitude images extracted from an off-axis electron hologram. This image is the product of the mean inner potential of the material and the mean-free-path for inelastic scattering. The method used has been evaluated using single crystal Si wedges with known linearly increasing thickness, and it has then been applied to CoSi2/Si epitaxial interfaces with unknown thickness. Thickness independent images of Si show constant contrast while images of hetero interface emphasize compositional differences.

UR - http://www.scopus.com/inward/record.url?scp=0028401556&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0028401556&partnerID=8YFLogxK

U2 - 10.1016/0304-3991(94)90041-8

DO - 10.1016/0304-3991(94)90041-8

M3 - Article

AN - SCOPUS:0028401556

VL - 53

SP - 291

EP - 296

JO - Ultramicroscopy

JF - Ultramicroscopy

SN - 0304-3991

IS - 3

ER -