Elimination of thickness dependence from medium resolution electron holograms

M. Gajdardziska-Josifovska; Martha McCartney

doi:10.1016/0304-3991(94)90041-8

Elimination of thickness dependence from medium resolution electron holograms

M. Gajdardziska-Josifovska, Martha McCartney

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

We show that a composition image that is independent of thickness can be obtained by suitably combining the phase and amplitude images extracted from an off-axis electron hologram. This image is the product of the mean inner potential of the material and the mean-free-path for inelastic scattering. The method used has been evaluated using single crystal Si wedges with known linearly increasing thickness, and it has then been applied to CoSi₂/Si epitaxial interfaces with unknown thickness. Thickness independent images of Si show constant contrast while images of hetero interface emphasize compositional differences.

Original language	English (US)
Pages (from-to)	291-296
Number of pages	6
Journal	Ultramicroscopy
Volume	53
Issue number	3
DOIs	https://doi.org/10.1016/0304-3991(94)90041-8
State	Published - Mar 1994

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Instrumentation

Access to Document

10.1016/0304-3991(94)90041-8

Cite this

@article{270b9819cf604e9ba84eac62f50a4980,

title = "Elimination of thickness dependence from medium resolution electron holograms",

abstract = "We show that a composition image that is independent of thickness can be obtained by suitably combining the phase and amplitude images extracted from an off-axis electron hologram. This image is the product of the mean inner potential of the material and the mean-free-path for inelastic scattering. The method used has been evaluated using single crystal Si wedges with known linearly increasing thickness, and it has then been applied to CoSi2/Si epitaxial interfaces with unknown thickness. Thickness independent images of Si show constant contrast while images of hetero interface emphasize compositional differences.",

author = "M. Gajdardziska-Josifovska and Martha McCartney",

note = "Funding Information: This work is based upon research conducted at the Center for High Resolution Electron Microscopy at Arizona State University, which is supported by the National Science Foundation under grant DMR-91-15680. Additional support for the first author was provided by J.C.H. Spence. We are grateful to P.A. Crozier, J.C.H. Spence and D.J. Smith for stimulating discussions and to R. Tung for the CoSi2/Si sample.",

year = "1994",

month = mar,

doi = "10.1016/0304-3991(94)90041-8",

language = "English (US)",

volume = "53",

pages = "291--296",

journal = "Ultramicroscopy",

issn = "0304-3991",

publisher = "Elsevier",

number = "3",

}

TY - JOUR

T1 - Elimination of thickness dependence from medium resolution electron holograms

AU - Gajdardziska-Josifovska, M.

AU - McCartney, Martha

N1 - Funding Information: This work is based upon research conducted at the Center for High Resolution Electron Microscopy at Arizona State University, which is supported by the National Science Foundation under grant DMR-91-15680. Additional support for the first author was provided by J.C.H. Spence. We are grateful to P.A. Crozier, J.C.H. Spence and D.J. Smith for stimulating discussions and to R. Tung for the CoSi2/Si sample.

PY - 1994/3

Y1 - 1994/3

N2 - We show that a composition image that is independent of thickness can be obtained by suitably combining the phase and amplitude images extracted from an off-axis electron hologram. This image is the product of the mean inner potential of the material and the mean-free-path for inelastic scattering. The method used has been evaluated using single crystal Si wedges with known linearly increasing thickness, and it has then been applied to CoSi2/Si epitaxial interfaces with unknown thickness. Thickness independent images of Si show constant contrast while images of hetero interface emphasize compositional differences.

AB - We show that a composition image that is independent of thickness can be obtained by suitably combining the phase and amplitude images extracted from an off-axis electron hologram. This image is the product of the mean inner potential of the material and the mean-free-path for inelastic scattering. The method used has been evaluated using single crystal Si wedges with known linearly increasing thickness, and it has then been applied to CoSi2/Si epitaxial interfaces with unknown thickness. Thickness independent images of Si show constant contrast while images of hetero interface emphasize compositional differences.

UR - http://www.scopus.com/inward/record.url?scp=0028401556&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0028401556&partnerID=8YFLogxK

U2 - 10.1016/0304-3991(94)90041-8

DO - 10.1016/0304-3991(94)90041-8

M3 - Article

AN - SCOPUS:0028401556

SN - 0304-3991

VL - 53

SP - 291

EP - 296

JO - Ultramicroscopy

JF - Ultramicroscopy

IS - 3

ER -

Elimination of thickness dependence from medium resolution electron holograms

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this