Electrostatically defined heterojunction rings and the Aharonov-Bohm effect

C. J.B. Ford; T. J. Thornton; R. Newbury; M. Pepper; H. Ahmed; D. C. Peacock; D. A. Ritchie; J. E.F. Frost; G. A.C. Jones

doi:10.1063/1.100818

Electrostatically defined heterojunction rings and the Aharonov-Bohm effect

C. J.B. Ford, T. J. Thornton, R. Newbury, M. Pepper, H. Ahmed, D. C. Peacock, D. A. Ritchie, J. E.F. Frost, G. A.C. Jones

Research output: Contribution to journal › Article › peer-review

81 Scopus citations

Abstract

Micron-sized loops of high-mobility two-dimensional electron gas have been made on GaAs-AlGaAs heterostructures using a novel split-gate technique. Aharonov-Bohm oscillations of amplitude up to 20% of the device resistance have been observed at very low temperatures (T<100 mK), together with h/2e oscillations which appear to be due to interference between pairs of time-reversed paths near B=0. The h/e period is found to vary by ∼25% with magnetic field, possibly as a result of the formation of edge states. In the quantum Hall effect, plateaus in R_xx are seen at high B due to variations in carrier concentration across the ring, which may cause backscattering of some edge states.

Original language	English (US)
Pages (from-to)	21-23
Number of pages	3
Journal	Applied Physics Letters
Volume	54
Issue number	1
DOIs	https://doi.org/10.1063/1.100818
State	Published - Dec 1 1989
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.100818

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abstract = "Micron-sized loops of high-mobility two-dimensional electron gas have been made on GaAs-AlGaAs heterostructures using a novel split-gate technique. Aharonov-Bohm oscillations of amplitude up to 20% of the device resistance have been observed at very low temperatures (T<100 mK), together with h/2e oscillations which appear to be due to interference between pairs of time-reversed paths near B=0. The h/e period is found to vary by ∼25% with magnetic field, possibly as a result of the formation of edge states. In the quantum Hall effect, plateaus in Rxx are seen at high B due to variations in carrier concentration across the ring, which may cause backscattering of some edge states.",

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AU - Ford, C. J.B.

AU - Thornton, T. J.

AU - Newbury, R.

AU - Pepper, M.

AU - Ahmed, H.

AU - Peacock, D. C.

AU - Ritchie, D. A.

AU - Frost, J. E.F.

AU - Jones, G. A.C.

PY - 1989/12/1

Y1 - 1989/12/1

N2 - Micron-sized loops of high-mobility two-dimensional electron gas have been made on GaAs-AlGaAs heterostructures using a novel split-gate technique. Aharonov-Bohm oscillations of amplitude up to 20% of the device resistance have been observed at very low temperatures (T<100 mK), together with h/2e oscillations which appear to be due to interference between pairs of time-reversed paths near B=0. The h/e period is found to vary by ∼25% with magnetic field, possibly as a result of the formation of edge states. In the quantum Hall effect, plateaus in Rxx are seen at high B due to variations in carrier concentration across the ring, which may cause backscattering of some edge states.

AB - Micron-sized loops of high-mobility two-dimensional electron gas have been made on GaAs-AlGaAs heterostructures using a novel split-gate technique. Aharonov-Bohm oscillations of amplitude up to 20% of the device resistance have been observed at very low temperatures (T<100 mK), together with h/2e oscillations which appear to be due to interference between pairs of time-reversed paths near B=0. The h/e period is found to vary by ∼25% with magnetic field, possibly as a result of the formation of edge states. In the quantum Hall effect, plateaus in Rxx are seen at high B due to variations in carrier concentration across the ring, which may cause backscattering of some edge states.

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Electrostatically defined heterojunction rings and the Aharonov-Bohm effect

Abstract

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