TY - GEN
T1 - Electrostatic fields and compositional fluctuations in InGaN quantum wells
AU - Stevens, M.
AU - Bell, A.
AU - Marui, H.
AU - Tanaka, S.
AU - Ponce, Fernando
PY - 2005/6/30
Y1 - 2005/6/30
N2 - The metastable nature of wurtzite InGaN alloys is exhibited in the numerous reports linking compositional fluctuations to electron microscopy and luminescence measurements. The electronic effects of these fluctuations can be simplified by a spatial variation of the bulk band gap. We have examined both the electrostatic potential and relative atomic density of In 0.13Ga0.87N 10nm-wide quantum wells containing In-compositional fluctuations and electrostatic potential fluctuations, using electron holography (EH) and electron tomography (ET). EH has shown the potential fluctuations are localized near to the substrate, are 2-3nm in size, and have negatively charged cores. Our ET 3D density maps of the In distribution reveal the existence of quantum dot like regions (QDs) of high In% also localized to within 3nm of the substrate, 3-5nm in width, and spaced ∼8nm apart.
AB - The metastable nature of wurtzite InGaN alloys is exhibited in the numerous reports linking compositional fluctuations to electron microscopy and luminescence measurements. The electronic effects of these fluctuations can be simplified by a spatial variation of the bulk band gap. We have examined both the electrostatic potential and relative atomic density of In 0.13Ga0.87N 10nm-wide quantum wells containing In-compositional fluctuations and electrostatic potential fluctuations, using electron holography (EH) and electron tomography (ET). EH has shown the potential fluctuations are localized near to the substrate, are 2-3nm in size, and have negatively charged cores. Our ET 3D density maps of the In distribution reveal the existence of quantum dot like regions (QDs) of high In% also localized to within 3nm of the substrate, 3-5nm in width, and spaced ∼8nm apart.
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U2 - 10.1063/1.1994069
DO - 10.1063/1.1994069
M3 - Conference contribution
AN - SCOPUS:33749484602
SN - 0735402574
SN - 9780735402577
T3 - AIP Conference Proceedings
SP - 213
EP - 214
BT - PHYSICS OF SEMICONDUCTORS
T2 - PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27
Y2 - 26 July 2004 through 30 July 2004
ER -