Electrostatic fields and compositional fluctuations in InGaN quantum wells

M. Stevens, A. Bell, H. Marui, S. Tanaka, Fernando Ponce

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

The metastable nature of wurtzite InGaN alloys is exhibited in the numerous reports linking compositional fluctuations to electron microscopy and luminescence measurements. The electronic effects of these fluctuations can be simplified by a spatial variation of the bulk band gap. We have examined both the electrostatic potential and relative atomic density of In 0.13Ga0.87N 10nm-wide quantum wells containing In-compositional fluctuations and electrostatic potential fluctuations, using electron holography (EH) and electron tomography (ET). EH has shown the potential fluctuations are localized near to the substrate, are 2-3nm in size, and have negatively charged cores. Our ET 3D density maps of the In distribution reveal the existence of quantum dot like regions (QDs) of high In% also localized to within 3nm of the substrate, 3-5nm in width, and spaced ∼8nm apart.

Original languageEnglish (US)
Title of host publicationPHYSICS OF SEMICONDUCTORS
Subtitle of host publication27th International Conference on the Physics of Semiconductors, ICPS-27
Pages213-214
Number of pages2
DOIs
StatePublished - Jun 30 2005
EventPHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 - Flagstaff, AZ, United States
Duration: Jul 26 2004Jul 30 2004

Publication series

NameAIP Conference Proceedings
Volume772
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Other

OtherPHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27
CountryUnited States
CityFlagstaff, AZ
Period7/26/047/30/04

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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