Electroplating of aluminium on silicon in an ionic liquid

Wen Cheng Sun, Xiaofei Han, Meng Tao

Research output: Contribution to journalArticle

7 Scopus citations

Abstract

Electroplating of aluminum (Al) on silicon (Si) substrates has been demonstrated in an above-room-temperature ionic liquid for the metallization of wafer-Si solar cells. The electrolyte was prepared by mixing anhydrous aluminum chloride and 1-ethyl-3- methylimidazolium tetrachloroaluminate. The plating was carried out by means of galvanostatic electrolysis. The structural and compositional properties of the Al deposits were characterized, and the sheet resistance of the deposits revealed the effects of pre-bake conditions, deposition temperature, and post-deposition annealing conditions. It was found that dense, adherent Al deposits with resistivity in the high 10-6 Ωcm range can be reproducibly obtained directly on Si substrates.

Original languageEnglish (US)
Pages (from-to)D5-D7
JournalECS Electrochemistry Letters
Volume4
Issue number4
DOIs
StatePublished - Jan 1 2015

ASJC Scopus subject areas

  • Fuel Technology
  • Electrochemistry
  • Materials Chemistry

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