Electronically-assisted thermal breakdown in chalcogenide glasses

J. M. Robertson; A. E. Owen

doi:10.1016/0022-3093(72)90173-1

Electronically-assisted thermal breakdown in chalcogenide glasses

J. M. Robertson, A. E. Owen

Arizona State University

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

The threshold characteristics of switches prepared from compositions in the As₂Te₃ + Si system have been examined. With low resistivity compositions (i.e. low Si content) the characteristics are adequately described by a simple thermal model, irrespective of the geometry of the device. As the resistivity is increased (i.e. increased Si content) the field-dependence of the conductivity becomes significant and has an important effect on the threshold characteristics of thin sandwich devices.

Original language	English (US)
Pages (from-to)	439-444
Number of pages	6
Journal	Journal of Non-Crystalline Solids
Volume	8-10
Issue number	C
DOIs	https://doi.org/10.1016/0022-3093(72)90173-1
State	Published - Jun 1972

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Ceramics and Composites
Condensed Matter Physics
Materials Chemistry

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10.1016/0022-3093(72)90173-1

Cite this

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title = "Electronically-assisted thermal breakdown in chalcogenide glasses",

abstract = "The threshold characteristics of switches prepared from compositions in the As2Te3 + Si system have been examined. With low resistivity compositions (i.e. low Si content) the characteristics are adequately described by a simple thermal model, irrespective of the geometry of the device. As the resistivity is increased (i.e. increased Si content) the field-dependence of the conductivity becomes significant and has an important effect on the threshold characteristics of thin sandwich devices.",

author = "Robertson, {J. M.} and Owen, {A. E.}",

year = "1972",

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AU - Robertson, J. M.

AU - Owen, A. E.

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N2 - The threshold characteristics of switches prepared from compositions in the As2Te3 + Si system have been examined. With low resistivity compositions (i.e. low Si content) the characteristics are adequately described by a simple thermal model, irrespective of the geometry of the device. As the resistivity is increased (i.e. increased Si content) the field-dependence of the conductivity becomes significant and has an important effect on the threshold characteristics of thin sandwich devices.

AB - The threshold characteristics of switches prepared from compositions in the As2Te3 + Si system have been examined. With low resistivity compositions (i.e. low Si content) the characteristics are adequately described by a simple thermal model, irrespective of the geometry of the device. As the resistivity is increased (i.e. increased Si content) the field-dependence of the conductivity becomes significant and has an important effect on the threshold characteristics of thin sandwich devices.

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AN - SCOPUS:49649141810

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JO - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

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ER -

Electronically-assisted thermal breakdown in chalcogenide glasses

Abstract

ASJC Scopus subject areas

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