Electronically-assisted thermal breakdown in chalcogenide glasses

J. M. Robertson, A. E. Owen

Research output: Contribution to journalArticle

16 Scopus citations

Abstract

The threshold characteristics of switches prepared from compositions in the As2Te3 + Si system have been examined. With low resistivity compositions (i.e. low Si content) the characteristics are adequately described by a simple thermal model, irrespective of the geometry of the device. As the resistivity is increased (i.e. increased Si content) the field-dependence of the conductivity becomes significant and has an important effect on the threshold characteristics of thin sandwich devices.

Original languageEnglish (US)
Pages (from-to)439-444
Number of pages6
JournalJournal of Non-Crystalline Solids
Volume8-10
Issue numberC
DOIs
StatePublished - Jun 1972

    Fingerprint

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Condensed Matter Physics
  • Materials Chemistry

Cite this