The threshold characteristics of switches prepared from compositions in the As2Te3 + Si system have been examined. With low resistivity compositions (i.e. low Si content) the characteristics are adequately described by a simple thermal model, irrespective of the geometry of the device. As the resistivity is increased (i.e. increased Si content) the field-dependence of the conductivity becomes significant and has an important effect on the threshold characteristics of thin sandwich devices.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Ceramics and Composites
- Condensed Matter Physics
- Materials Chemistry