Electronically-assisted thermal breakdown in chalcogenide glasses

J. M. Robertson, A. E. Owen

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

The threshold characteristics of switches prepared from compositions in the As2Te3 + Si system have been examined. With low resistivity compositions (i.e. low Si content) the characteristics are adequately described by a simple thermal model, irrespective of the geometry of the device. As the resistivity is increased (i.e. increased Si content) the field-dependence of the conductivity becomes significant and has an important effect on the threshold characteristics of thin sandwich devices.

Original languageEnglish (US)
Pages (from-to)439-444
Number of pages6
JournalJournal of Non-Crystalline Solids
Volume8-10
Issue numberC
DOIs
StatePublished - 1972
Externally publishedYes

Fingerprint

breakdown
Glass
glass
Chemical analysis
electrical resistivity
thresholds
Switches
Geometry
switches
conductivity
geometry
Hot Temperature

ASJC Scopus subject areas

  • Ceramics and Composites
  • Electronic, Optical and Magnetic Materials

Cite this

Electronically-assisted thermal breakdown in chalcogenide glasses. / Robertson, J. M.; Owen, A. E.

In: Journal of Non-Crystalline Solids, Vol. 8-10, No. C, 1972, p. 439-444.

Research output: Contribution to journalArticle

Robertson, J. M. ; Owen, A. E. / Electronically-assisted thermal breakdown in chalcogenide glasses. In: Journal of Non-Crystalline Solids. 1972 ; Vol. 8-10, No. C. pp. 439-444.
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