Electronic surface and dielectric interface states on GaN and AlGaN

Chemical Compounds

• Interface State 100%
• Band Bending 61%
• Dielectric Material 57%
• Leakage Current 56%
• Surface State 51%
• Electronic State 47%
• Polarization 32%
• Electron Trap 30%
• Surface Defect 25%
• Surface 20%
• Dioxygen 10%
• Carbon Atom 10%
• Metal 9%

Engineering & Materials Science

• Interface states 99%
• Electronic states 77%
• Surface states 46%
• Leakage currents 34%
• Electron traps 30%
• Polarization 29%
• Compensation and Redress 24%
• Defects 22%
• Heterojunctions 21%
• Surface defects 19%
• Contamination 15%
• Power electronics 15%
• Cleaning 15%
• Oxygen 13%
• Carbon 12%
• Metals 10%

Physics & Astronomy

• electronics 33%
• leakage 26%
• performance 21%
• defects 18%
• surface defects 17%
• polarization 17%
• configurations 17%
• cleaning 16%
• contamination 14%
• alignment 12%
• traps 12%
• carbon 10%
• oxygen 9%
• metals 8%
• electrons 6%