Electronic structure of transition metal high-k dielectrics: Interfacial band offset energies for microelectronic devices

Engineering & Materials Science

• Valence bands 100%
• Conduction bands 94%
• High-k dielectric 87%
• Electronic structure 82%
• Transition metals 81%
• Silicates 64%
• Microelectronics 59%
• X ray absorption spectroscopy 54%
• Photoemission 50%
• Auger electron spectroscopy 43%
• X ray photoelectron spectroscopy 33%
• Energy gap 31%
• Leakage currents 29%
• Permittivity 27%
• Chemical analysis 18%

Physics & Astronomy

• microelectronics 56%
• silicates 53%
• energy bands 51%
• conduction bands 47%
• transition metals 46%
• electronic structure 41%
• valence 40%
• Auger spectroscopy 27%
• electron spectroscopy 26%
• absorption spectroscopy 25%
• x rays 25%
• photoelectric emission 24%
• leakage 22%
• photoelectron spectroscopy 22%
• permittivity 19%
• energy 8%

Chemical Compounds

• Band Offset 88%
• Microelectronics 62%
• Dielectric Material 49%
• Electronic State 40%
• Transition Element 40%
• Valence Band 30%
• Conduction Band 30%
• Tunneling 28%
• Energy 26%
• Alloy 19%
• Leakage Current 18%
• Photoemission 16%
• Auger Electron Spectroscopy 15%
• X Ray Absorption Spectroscopy 14%
• Dielectric Constant 12%
• Ab Initio Calculation 12%
• Band Gap 10%
• X-Ray Photoelectron Spectroscopy 9%