Electronic structure of the unreconstructed 30°partial dislocation in silicon

John E. Northrup, Marvin L. Cohen, James R. Chelikowsky, John Spence, A. Olsen

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Abstract

The electronic structure of the unreconstructed 30°partial dislocation in silicon is calculated using a local pseudopotential and a minimal basis set. The minimal basis set consists of s- and p-symmetry orbitals and is augmented by five d-symmetry orbitals. The model-core geometry is determined by high-resolution electron microscopy. The calculation indicates the existence of a one-dimensional band of dangling-bond states which propagate along the dislocation line. This band is half filled, implying metallic properties.

Original languageEnglish (US)
Pages (from-to)4623-4628
Number of pages6
JournalPhysical Review B
Volume24
Issue number8
DOIs
StatePublished - Jan 1 1981

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ASJC Scopus subject areas

  • Condensed Matter Physics

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