Electronic structure of the unreconstructed 30°partial dislocation in silicon

John E. Northrup, Marvin L. Cohen, James R. Chelikowsky, John Spence, A. Olsen

Research output: Contribution to journalArticle

38 Citations (Scopus)

Abstract

The electronic structure of the unreconstructed 30°partial dislocation in silicon is calculated using a local pseudopotential and a minimal basis set. The minimal basis set consists of s- and p-symmetry orbitals and is augmented by five d-symmetry orbitals. The model-core geometry is determined by high-resolution electron microscopy. The calculation indicates the existence of a one-dimensional band of dangling-bond states which propagate along the dislocation line. This band is half filled, implying metallic properties.

Original languageEnglish (US)
Pages (from-to)4623-4628
Number of pages6
JournalPhysical Review B
Volume24
Issue number8
DOIs
StatePublished - 1981

Fingerprint

Dangling bonds
High resolution electron microscopy
Silicon
Electronic structure
Sand
electronic structure
orbitals
Geometry
symmetry
silicon
pseudopotentials
sands
electron microscopy
high resolution
geometry

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Electronic structure of the unreconstructed 30°partial dislocation in silicon. / Northrup, John E.; Cohen, Marvin L.; Chelikowsky, James R.; Spence, John; Olsen, A.

In: Physical Review B, Vol. 24, No. 8, 1981, p. 4623-4628.

Research output: Contribution to journalArticle

Northrup, John E. ; Cohen, Marvin L. ; Chelikowsky, James R. ; Spence, John ; Olsen, A. / Electronic structure of the unreconstructed 30°partial dislocation in silicon. In: Physical Review B. 1981 ; Vol. 24, No. 8. pp. 4623-4628.
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