Abstract
The electronic structure of the unreconstructed 30°partial dislocation in silicon is calculated using a local pseudopotential and a minimal basis set. The minimal basis set consists of s- and p-symmetry orbitals and is augmented by five d-symmetry orbitals. The model-core geometry is determined by high-resolution electron microscopy. The calculation indicates the existence of a one-dimensional band of dangling-bond states which propagate along the dislocation line. This band is half filled, implying metallic properties.
Original language | English (US) |
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Pages (from-to) | 4623-4628 |
Number of pages | 6 |
Journal | Physical Review B |
Volume | 24 |
Issue number | 8 |
DOIs | |
State | Published - 1981 |
ASJC Scopus subject areas
- Condensed Matter Physics