ELECTRONIC STRUCTURE OF PARTIAL DISLOCATIONS IN SILICON.

John Spence, J. R. Chelikowsky

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Since the finding that dislocations in tetrahedrally co-ordinated semiconductors are generally dissociated, there has been renewed interest in understanding how both mechanical properties (e. g. dependence of dislocation velocity on doping) and electrical properties (EPR, recombination, luminescence) depend on the atomic structure of kinks and dislocation cores. The possibilities of hoping conductivity, metal insulator transitions, solitions and antiphase domains in the 'one dimensional' dislocation core have all been considered. The most important dislocations are the thirty and ninety degree partials. The authors have calculated the density of states, band structure and total pseudopotential method.

Original languageEnglish (US)
Title of host publicationUnknown Host Publication Title
PublisherMetallurgical Soc of AIME
Number of pages1
ISBN (Print)0895204851
StatePublished - Jan 1 1985

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ASJC Scopus subject areas

  • Engineering(all)

Cite this

Spence, J., & Chelikowsky, J. R. (1985). ELECTRONIC STRUCTURE OF PARTIAL DISLOCATIONS IN SILICON. In Unknown Host Publication Title Metallurgical Soc of AIME.