Electronic structure of ideal and nonideal metal/GaAs contacts

Mark Van Schilfgaarde; N. Newman

doi:10.1116/1.585753

Electronic structure of ideal and nonideal metal/GaAs contacts

Mark Van Schilfgaarde, N. Newman

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

On the basis of explicit first-principles electronic structure calculations of a number of ideal and nonideal metal/GaAs interfaces, we show that nonidealities and imperfections play a major role in determining the Schottky barrier height. For the ideal interfaces, the calculated pinning positions ranged from 0 to 1 eV above the valence-band maximum, in contradiction to experiment. As one example of a defect, we incorporate an As antisite defect near the interface, and show that it significantly alters the electronic structure and Schottky barrier height.

Original language	English (US)
Pages (from-to)	2140-2145
Number of pages	6
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	9
Issue number	4
DOIs	https://doi.org/10.1116/1.585753
State	Published - Jul 1 1991
Externally published	Yes

Keywords

Ab initio calculations
Energy-level density
Gallium arsenides
Interface states
Metals
Pinning
Potential barrier
Schottky barrier diodes

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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10.1116/1.585753

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abstract = "On the basis of explicit first-principles electronic structure calculations of a number of ideal and nonideal metal/GaAs interfaces, we show that nonidealities and imperfections play a major role in determining the Schottky barrier height. For the ideal interfaces, the calculated pinning positions ranged from 0 to 1 eV above the valence-band maximum, in contradiction to experiment. As one example of a defect, we incorporate an As antisite defect near the interface, and show that it significantly alters the electronic structure and Schottky barrier height.",

keywords = "Ab initio calculations, Energy-level density, Gallium arsenides, Interface states, Metals, Pinning, Potential barrier, Schottky barrier diodes",

author = "{Van Schilfgaarde}, Mark and N. Newman",

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doi = "10.1116/1.585753",

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T1 - Electronic structure of ideal and nonideal metal/GaAs contacts

AU - Van Schilfgaarde, Mark

AU - Newman, N.

PY - 1991/7/1

Y1 - 1991/7/1

N2 - On the basis of explicit first-principles electronic structure calculations of a number of ideal and nonideal metal/GaAs interfaces, we show that nonidealities and imperfections play a major role in determining the Schottky barrier height. For the ideal interfaces, the calculated pinning positions ranged from 0 to 1 eV above the valence-band maximum, in contradiction to experiment. As one example of a defect, we incorporate an As antisite defect near the interface, and show that it significantly alters the electronic structure and Schottky barrier height.

AB - On the basis of explicit first-principles electronic structure calculations of a number of ideal and nonideal metal/GaAs interfaces, we show that nonidealities and imperfections play a major role in determining the Schottky barrier height. For the ideal interfaces, the calculated pinning positions ranged from 0 to 1 eV above the valence-band maximum, in contradiction to experiment. As one example of a defect, we incorporate an As antisite defect near the interface, and show that it significantly alters the electronic structure and Schottky barrier height.

KW - Ab initio calculations

KW - Energy-level density

KW - Gallium arsenides

KW - Interface states

KW - Metals

KW - Pinning

KW - Potential barrier

KW - Schottky barrier diodes

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JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

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ER -

Electronic structure of ideal and nonideal metal/GaAs contacts

Abstract

Keywords

ASJC Scopus subject areas

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