ELECTRONIC STRUCTURE OF CePd//3 FROM RESONANT PHOTOEMISSION AND OPTICAL REFLECTIVITY SPECTRA.

J. W. Allen, Robert Nemanich, S. J. Oh

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

Optical reflectivity and resonant photoemission measurements on CePd//3 yield a 4f binding energy E//f between 0. 7 and 1. 0 ev and set an upper limit of 0. 3 ev on a surface shift of E//f. The 4f halfwidth at half maximum delta is between 0. 5 and 0. 8 ev. The spin fluctuation energy GAMMA equals 20 mev is successfully related to E//f and delta by the Kondo impurity Ansatz.

Original languageEnglish (US)
Pages (from-to)2145-2148
Number of pages4
JournalJournal of Applied Physics
Volume53
Issue number3 pt 2
DOIs
StatePublished - Mar 1981
Externally publishedYes

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photoelectric emission
reflectance
binding energy
impurities
shift
energy

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Physics and Astronomy (miscellaneous)

Cite this

ELECTRONIC STRUCTURE OF CePd//3 FROM RESONANT PHOTOEMISSION AND OPTICAL REFLECTIVITY SPECTRA. / Allen, J. W.; Nemanich, Robert; Oh, S. J.

In: Journal of Applied Physics, Vol. 53, No. 3 pt 2, 03.1981, p. 2145-2148.

Research output: Contribution to journalArticle

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