Electronic structure and Schottky-barrier formation of Ag on n-type GaAs(110)

K. K. Chin, S. H. Pan, D. Mo, P. Mahowald, Nathan Newman, I. Lindau, W. E. Spicer

Research output: Contribution to journalArticle

33 Citations (Scopus)

Abstract

The electronic structure and Schottky-barrier formation of the Ag/[cleaved n-type GaAs(110)] interface are studied at room temperature by using ultraviolet and x-ray photoemission spectroscopy. It is found that more metal coverage is needed to pin the surface Fermi level with Ag than with most other metals. The Schottky barrier is resolved as 0.830.1 eV high (compared to 0.900.1 eV for Cu/[n-type GaAs(110)] and 0.920.1 eV for Au/[n-type GaAs(110)]). At the early stage of Ag deposition, the so-called atomiclike Ag 5s states and Ag 3d core levels are observed, which may imply that the interaction between Ag and GaAs is weak and raises the possibility that the Ag atoms may form clusters during the initial stages of metal deposition. It is found that the Ag valence-band photoyield has a maximum at a coverage of 1030 A. This photoyield enhancement is explained in terms of Ag clustering and the Stranski-Kristanov growth pattern. In the framework of the unified defect model, it is proposed that the heat released due to the Ag-Ag interaction is responsible for the creation of the defect levels which pin the Fermi level in the Ag/[n-type GaAs(110)] interface. Thus, defects are produced under the clusters but not on the open GaAs surfaces not covered by Ag; this leads to the increased amount of metal needed to complete the surface Fermi-level pinning.

Original languageEnglish (US)
Pages (from-to)918-923
Number of pages6
JournalPhysical Review B
Volume32
Issue number2
DOIs
StatePublished - 1985
Externally publishedYes

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Electronic structure
Fermi level
electronic structure
Metals
Defects
metals
Fermi surfaces
defects
Core levels
Photoelectron spectroscopy
Valence bands
X rays
photoelectric emission
Atoms
gallium arsenide
interactions
valence
heat
augmentation
room temperature

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Chin, K. K., Pan, S. H., Mo, D., Mahowald, P., Newman, N., Lindau, I., & Spicer, W. E. (1985). Electronic structure and Schottky-barrier formation of Ag on n-type GaAs(110). Physical Review B, 32(2), 918-923. https://doi.org/10.1103/PhysRevB.32.918

Electronic structure and Schottky-barrier formation of Ag on n-type GaAs(110). / Chin, K. K.; Pan, S. H.; Mo, D.; Mahowald, P.; Newman, Nathan; Lindau, I.; Spicer, W. E.

In: Physical Review B, Vol. 32, No. 2, 1985, p. 918-923.

Research output: Contribution to journalArticle

Chin, KK, Pan, SH, Mo, D, Mahowald, P, Newman, N, Lindau, I & Spicer, WE 1985, 'Electronic structure and Schottky-barrier formation of Ag on n-type GaAs(110)', Physical Review B, vol. 32, no. 2, pp. 918-923. https://doi.org/10.1103/PhysRevB.32.918
Chin, K. K. ; Pan, S. H. ; Mo, D. ; Mahowald, P. ; Newman, Nathan ; Lindau, I. ; Spicer, W. E. / Electronic structure and Schottky-barrier formation of Ag on n-type GaAs(110). In: Physical Review B. 1985 ; Vol. 32, No. 2. pp. 918-923.
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