Electronic states at the interface of Ti-Si oxide on Si(100)

C. C. Fulton, G. Lucovsky, R. J. Nemanich

Research output: Contribution to journalConference article

44 Scopus citations

Abstract

The electronic properties of TiO2 films grown on Si were studied starting with a thin SiO2 layer on Si(100), then depositing and oxidizing Ti metal films in a stepwise fashion. Electronic states were explored with x-ray and ultraviolet photoemission spectroscopy. Based on the measurements, schematic diagrams of the interface band structure evolution were constructed.

Original languageEnglish (US)
Pages (from-to)1726-1731
Number of pages6
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume20
Issue number4
DOIs
StatePublished - Jul 1 2002
Externally publishedYes
EventProceedings of the 29th Conference on the Physics and Chemistry of Semiconductor Interfaces - Santa Fe, NM, United States
Duration: Jan 6 2002Jan 10 2002

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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