Electronic states at the interface of Ti-Si oxide on Si(100)

C. C. Fulton; G. Lucovsky; R. J. Nemanich

doi:10.1116/1.1493785

Electronic states at the interface of Ti-Si oxide on Si(100)

C. C. Fulton, G. Lucovsky, R. J. Nemanich

Research output: Contribution to journal › Conference article › peer-review

46 Scopus citations

Abstract

The electronic properties of TiO₂ films grown on Si were studied starting with a thin SiO₂ layer on Si(100), then depositing and oxidizing Ti metal films in a stepwise fashion. Electronic states were explored with x-ray and ultraviolet photoemission spectroscopy. Based on the measurements, schematic diagrams of the interface band structure evolution were constructed.

Original language	English (US)
Pages (from-to)	1726-1731
Number of pages	6
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	20
Issue number	4
DOIs	https://doi.org/10.1116/1.1493785
State	Published - Jul 2002
Externally published	Yes
Event	Proceedings of the 29th Conference on the Physics and Chemistry of Semiconductor Interfaces - Santa Fe, NM, United States Duration: Jan 6 2002 → Jan 10 2002

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1116/1.1493785

Cite this

@article{02b354984ed74e5bbdf89024d36f8d5f,

title = "Electronic states at the interface of Ti-Si oxide on Si(100)",

abstract = "The electronic properties of TiO2 films grown on Si were studied starting with a thin SiO2 layer on Si(100), then depositing and oxidizing Ti metal films in a stepwise fashion. Electronic states were explored with x-ray and ultraviolet photoemission spectroscopy. Based on the measurements, schematic diagrams of the interface band structure evolution were constructed.",

author = "Fulton, {C. C.} and G. Lucovsky and Nemanich, {R. J.}",

year = "2002",

month = jul,

doi = "10.1116/1.1493785",

language = "English (US)",

volume = "20",

pages = "1726--1731",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

number = "4",

note = "Proceedings of the 29th Conference on the Physics and Chemistry of Semiconductor Interfaces ; Conference date: 06-01-2002 Through 10-01-2002",

}

TY - JOUR

T1 - Electronic states at the interface of Ti-Si oxide on Si(100)

AU - Fulton, C. C.

AU - Lucovsky, G.

AU - Nemanich, R. J.

PY - 2002/7

Y1 - 2002/7

N2 - The electronic properties of TiO2 films grown on Si were studied starting with a thin SiO2 layer on Si(100), then depositing and oxidizing Ti metal films in a stepwise fashion. Electronic states were explored with x-ray and ultraviolet photoemission spectroscopy. Based on the measurements, schematic diagrams of the interface band structure evolution were constructed.

AB - The electronic properties of TiO2 films grown on Si were studied starting with a thin SiO2 layer on Si(100), then depositing and oxidizing Ti metal films in a stepwise fashion. Electronic states were explored with x-ray and ultraviolet photoemission spectroscopy. Based on the measurements, schematic diagrams of the interface band structure evolution were constructed.

UR - http://www.scopus.com/inward/record.url?scp=0035982609&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035982609&partnerID=8YFLogxK

U2 - 10.1116/1.1493785

DO - 10.1116/1.1493785

M3 - Conference article

AN - SCOPUS:0035982609

SN - 1071-1023

VL - 20

SP - 1726

EP - 1731

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 4

T2 - Proceedings of the 29th Conference on the Physics and Chemistry of Semiconductor Interfaces

Y2 - 6 January 2002 through 10 January 2002

ER -

Electronic states at the interface of Ti-Si oxide on Si(100)

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this