The dispersed fluorescence following pulsed dye laser excitation of the B2Σ+-X2Σ+ (0, 0) band of a cold sample of SiO+ has been recorded and analyzed. The branching ratios for B2Σ+ (v = 0) → X2Σ+ (v) and B2Σ+ (v = 0) → A2Πi(v) emission were determined and compared with values predicted based upon existing experimental and theoretical data. The experimentally determined branching ratios show that the B2Σ+ (v = 0) → X2Σ+ (v) transitions are somewhat less diagonal than predicted. The implications for laser cooling of a trapped sample of SiO+ using broadband laser excitation are discussed.
- Branching ratios
- Cold sample SiO cation
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics
- Physical and Theoretical Chemistry