Electronic ranian scattering from Mg-doped wurtzite GaN

Kong-Thon Tsen; C. Koch; Y. Chen; H. Morkoc; J. Li; J. Y. Lin; H. X. Jiang

Electronic ranian scattering from Mg-doped wurtzite GaN

Kong-Thon Tsen, C. Koch, Y. Chen, H. Morkoc, J. Li, J. Y. Lin, H. X. Jiang

Physics

Research output: Chapter in Book/Report/Conference proceeding › Chapter

Abstract

Electronic Raman scattering experiments have been carried out on both MBE and MOCVD-grown Mg-doped wurtzite GaN samples. Aside from the expected Raman lines, a broad structure (FWHM = 15c«r' ) observed for the first time at around 841cr' is attributed to the electronic Raman scattering from neutral Mg impurities in Mg-doped GaN. From the analysis of the temperature-dependence of this electronic Raman scattering signal binding energy of the Mg impurities in wurtzite GaN has been found to be E _b = 172 ±IQmeV . These experimental results demonstrate that the energy between the ground and first excited states of Mg impurities in wurtzite GaN is about 3/5 of its binding energy.

Original language	English (US)
Title of host publication	Materials Research Society Symposium - Proceedings
Volume	595
State	Published - 2000

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

Cite this

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title = "Electronic ranian scattering from Mg-doped wurtzite GaN",

abstract = "Electronic Raman scattering experiments have been carried out on both MBE and MOCVD-grown Mg-doped wurtzite GaN samples. Aside from the expected Raman lines, a broad structure (FWHM = 15c«r' ) observed for the first time at around 841cr' is attributed to the electronic Raman scattering from neutral Mg impurities in Mg-doped GaN. From the analysis of the temperature-dependence of this electronic Raman scattering signal binding energy of the Mg impurities in wurtzite GaN has been found to be E b = 172 ±IQmeV . These experimental results demonstrate that the energy between the ground and first excited states of Mg impurities in wurtzite GaN is about 3/5 of its binding energy.",

author = "Kong-Thon Tsen and C. Koch and Y. Chen and H. Morkoc and J. Li and Lin, {J. Y.} and Jiang, {H. X.}",

year = "2000",

language = "English (US)",

volume = "595",

booktitle = "Materials Research Society Symposium - Proceedings",

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TY - CHAP

T1 - Electronic ranian scattering from Mg-doped wurtzite GaN

AU - Tsen, Kong-Thon

AU - Koch, C.

AU - Chen, Y.

AU - Morkoc, H.

AU - Li, J.

AU - Lin, J. Y.

AU - Jiang, H. X.

PY - 2000

Y1 - 2000

N2 - Electronic Raman scattering experiments have been carried out on both MBE and MOCVD-grown Mg-doped wurtzite GaN samples. Aside from the expected Raman lines, a broad structure (FWHM = 15c«r' ) observed for the first time at around 841cr' is attributed to the electronic Raman scattering from neutral Mg impurities in Mg-doped GaN. From the analysis of the temperature-dependence of this electronic Raman scattering signal binding energy of the Mg impurities in wurtzite GaN has been found to be E b = 172 ±IQmeV . These experimental results demonstrate that the energy between the ground and first excited states of Mg impurities in wurtzite GaN is about 3/5 of its binding energy.

AB - Electronic Raman scattering experiments have been carried out on both MBE and MOCVD-grown Mg-doped wurtzite GaN samples. Aside from the expected Raman lines, a broad structure (FWHM = 15c«r' ) observed for the first time at around 841cr' is attributed to the electronic Raman scattering from neutral Mg impurities in Mg-doped GaN. From the analysis of the temperature-dependence of this electronic Raman scattering signal binding energy of the Mg impurities in wurtzite GaN has been found to be E b = 172 ±IQmeV . These experimental results demonstrate that the energy between the ground and first excited states of Mg impurities in wurtzite GaN is about 3/5 of its binding energy.

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UR - http://www.scopus.com/inward/citedby.url?scp=33751345590&partnerID=8YFLogxK

M3 - Chapter

AN - SCOPUS:33751345590

VL - 595

BT - Materials Research Society Symposium - Proceedings

ER -

Electronic ranian scattering from Mg-doped wurtzite GaN

Abstract

ASJC Scopus subject areas

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