Electronic ranian scattering from Mg-doped wurtzite GaN

Kong-Thon Tsen, C. Koch, Y. Chen, H. Morkoc, J. Li, J. Y. Lin, H. X. Jiang

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

Electronic Raman scattering experiments have been carried out on both MBE and MOCVD-grown Mg-doped wurtzite GaN samples. Aside from the expected Raman lines, a broad structure (FWHM = 15c«r' ) observed for the first time at around 841cr' is attributed to the electronic Raman scattering from neutral Mg impurities in Mg-doped GaN. From the analysis of the temperature-dependence of this electronic Raman scattering signal binding energy of the Mg impurities in wurtzite GaN has been found to be E b = 172 ±IQmeV . These experimental results demonstrate that the energy between the ground and first excited states of Mg impurities in wurtzite GaN is about 3/5 of its binding energy.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
Volume595
StatePublished - 2000

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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    Tsen, K-T., Koch, C., Chen, Y., Morkoc, H., Li, J., Lin, J. Y., & Jiang, H. X. (2000). Electronic ranian scattering from Mg-doped wurtzite GaN. In Materials Research Society Symposium - Proceedings (Vol. 595)