Electronic Raman scattering from Mg-doped wurtzite GaN

Kong-Thon Tsen, C. Koch, Y. Chen, H. Morkoc, J. Li, J. Y. Lin, H. X. Jiang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Electronic Raman scattering experiments have been carried out on both MBE and MOCVD-grown Mg-doped wurtzite GaN samples. Aside from the expected Raman lines, a broad structure (FWHM ≅ 15cm -1) observed for the first time at around 841cm -1 is attributed to the electronic Raman scattering from neutral Mg impurities in Mg-doped GaN. From the analysis of the temperature-dependence of this electronic Raman scattering signal binding energy of the Mg impurities in wurtzite GaN has been found to be E b ≅ 172 ± 20meV. These experimental results demonstrate that the energy between the ground and first excited states of Mg impurities in wurtzite GaN is about 3/5 of its binding energy.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
PublisherMaterials Research Society
Volume595
StatePublished - 2000
EventThe 1999 MRS Fall Meeting - Symposium W 'GaN and Related Alloys' - Boston, MA, USA
Duration: Nov 28 1999Dec 3 1999

Other

OtherThe 1999 MRS Fall Meeting - Symposium W 'GaN and Related Alloys'
CityBoston, MA, USA
Period11/28/9912/3/99

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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