Electronic Raman scattering from Mg-doped wurtzite GaN

Kong-Thon Tsen, C. Koch, Y. Chen, H. Morkoc, J. Li, J. Y. Lin, H. X. Jiang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Electronic Raman scattering experiments have been carried out on both MBE and MOCVD-grown Mg-doped wurtzite GaN samples. Aside from the expected Raman lines, a broad structure (FWHM ≅ 15cm -1) observed for the first time at around 841cm -1 is attributed to the electronic Raman scattering from neutral Mg impurities in Mg-doped GaN. From the analysis of the temperature-dependence of this electronic Raman scattering signal binding energy of the Mg impurities in wurtzite GaN has been found to be E b ≅ 172 ± 20meV. These experimental results demonstrate that the energy between the ground and first excited states of Mg impurities in wurtzite GaN is about 3/5 of its binding energy.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
PublisherMaterials Research Society
Volume595
StatePublished - 2000
EventThe 1999 MRS Fall Meeting - Symposium W 'GaN and Related Alloys' - Boston, MA, USA
Duration: Nov 28 1999Dec 3 1999

Other

OtherThe 1999 MRS Fall Meeting - Symposium W 'GaN and Related Alloys'
CityBoston, MA, USA
Period11/28/9912/3/99

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Raman scattering
Impurities
Binding energy
Metallorganic chemical vapor deposition
Full width at half maximum
Excited states
Molecular beam epitaxy
Experiments
Temperature

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Tsen, K-T., Koch, C., Chen, Y., Morkoc, H., Li, J., Lin, J. Y., & Jiang, H. X. (2000). Electronic Raman scattering from Mg-doped wurtzite GaN. In Materials Research Society Symposium - Proceedings (Vol. 595). Materials Research Society.

Electronic Raman scattering from Mg-doped wurtzite GaN. / Tsen, Kong-Thon; Koch, C.; Chen, Y.; Morkoc, H.; Li, J.; Lin, J. Y.; Jiang, H. X.

Materials Research Society Symposium - Proceedings. Vol. 595 Materials Research Society, 2000.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Tsen, K-T, Koch, C, Chen, Y, Morkoc, H, Li, J, Lin, JY & Jiang, HX 2000, Electronic Raman scattering from Mg-doped wurtzite GaN. in Materials Research Society Symposium - Proceedings. vol. 595, Materials Research Society, The 1999 MRS Fall Meeting - Symposium W 'GaN and Related Alloys', Boston, MA, USA, 11/28/99.
Tsen K-T, Koch C, Chen Y, Morkoc H, Li J, Lin JY et al. Electronic Raman scattering from Mg-doped wurtzite GaN. In Materials Research Society Symposium - Proceedings. Vol. 595. Materials Research Society. 2000
Tsen, Kong-Thon ; Koch, C. ; Chen, Y. ; Morkoc, H. ; Li, J. ; Lin, J. Y. ; Jiang, H. X. / Electronic Raman scattering from Mg-doped wurtzite GaN. Materials Research Society Symposium - Proceedings. Vol. 595 Materials Research Society, 2000.
@inproceedings{3412f65a391045378832528bc56c73ed,
title = "Electronic Raman scattering from Mg-doped wurtzite GaN",
abstract = "Electronic Raman scattering experiments have been carried out on both MBE and MOCVD-grown Mg-doped wurtzite GaN samples. Aside from the expected Raman lines, a broad structure (FWHM ≅ 15cm -1) observed for the first time at around 841cm -1 is attributed to the electronic Raman scattering from neutral Mg impurities in Mg-doped GaN. From the analysis of the temperature-dependence of this electronic Raman scattering signal binding energy of the Mg impurities in wurtzite GaN has been found to be E b ≅ 172 ± 20meV. These experimental results demonstrate that the energy between the ground and first excited states of Mg impurities in wurtzite GaN is about 3/5 of its binding energy.",
author = "Kong-Thon Tsen and C. Koch and Y. Chen and H. Morkoc and J. Li and Lin, {J. Y.} and Jiang, {H. X.}",
year = "2000",
language = "English (US)",
volume = "595",
booktitle = "Materials Research Society Symposium - Proceedings",
publisher = "Materials Research Society",

}

TY - GEN

T1 - Electronic Raman scattering from Mg-doped wurtzite GaN

AU - Tsen, Kong-Thon

AU - Koch, C.

AU - Chen, Y.

AU - Morkoc, H.

AU - Li, J.

AU - Lin, J. Y.

AU - Jiang, H. X.

PY - 2000

Y1 - 2000

N2 - Electronic Raman scattering experiments have been carried out on both MBE and MOCVD-grown Mg-doped wurtzite GaN samples. Aside from the expected Raman lines, a broad structure (FWHM ≅ 15cm -1) observed for the first time at around 841cm -1 is attributed to the electronic Raman scattering from neutral Mg impurities in Mg-doped GaN. From the analysis of the temperature-dependence of this electronic Raman scattering signal binding energy of the Mg impurities in wurtzite GaN has been found to be E b ≅ 172 ± 20meV. These experimental results demonstrate that the energy between the ground and first excited states of Mg impurities in wurtzite GaN is about 3/5 of its binding energy.

AB - Electronic Raman scattering experiments have been carried out on both MBE and MOCVD-grown Mg-doped wurtzite GaN samples. Aside from the expected Raman lines, a broad structure (FWHM ≅ 15cm -1) observed for the first time at around 841cm -1 is attributed to the electronic Raman scattering from neutral Mg impurities in Mg-doped GaN. From the analysis of the temperature-dependence of this electronic Raman scattering signal binding energy of the Mg impurities in wurtzite GaN has been found to be E b ≅ 172 ± 20meV. These experimental results demonstrate that the energy between the ground and first excited states of Mg impurities in wurtzite GaN is about 3/5 of its binding energy.

UR - http://www.scopus.com/inward/record.url?scp=0033720115&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033720115&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0033720115

VL - 595

BT - Materials Research Society Symposium - Proceedings

PB - Materials Research Society

ER -