Electronic Raman scattering from carbon acceptors in undoped GaAs-Al1-xGaxAs multiple quantum wells

Kong-Thon Tsen, J. Klem, H. Morkoç

Research output: Contribution to journalArticle

5 Scopus citations


Electronic Raman scattering related to carbon acceptor states was observed in undoped GaAs-Al1-xGaxAs multiple quantum well structures. The experimental results show that the largest contributions involve transitions from Γ6 (heavy hole) ground state to Γ6 (heavy hole) first excited state at the center of the well, and are in good agreement with recent theoretical calculations.

Original languageEnglish (US)
Pages (from-to)537-540
Number of pages4
JournalSolid State Communications
Issue number8
StatePublished - Aug 1986


ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

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