Electronic Raman scattering related to carbon acceptor states was observed in undoped GaAs-Al1-xGaxAs multiple quantum well structures. The experimental results show that the largest contributions involve transitions from Γ6 (heavy hole) ground state to Γ6 (heavy hole) first excited state at the center of the well, and are in good agreement with recent theoretical calculations.
|Original language||English (US)|
|Number of pages||4|
|Journal||Solid State Communications|
|State||Published - Aug 1986|
ASJC Scopus subject areas
- Condensed Matter Physics
- Materials Chemistry