Electronic Raman scattering from carbon acceptors in undoped GaAs-Al1-xGaxAs multiple quantum wells

Kong-Thon Tsen; J. Klem; H. Morkoç

doi:10.1016/0038-1098(86)90053-0

Electronic Raman scattering from carbon acceptors in undoped GaAs-Al_1-xGa_xAs multiple quantum wells

Kong-Thon Tsen, J. Klem, H. Morkoç

Research output: Contribution to journal › Article › peer-review

Abstract

Electronic Raman scattering related to carbon acceptor states was observed in undoped GaAs-Al_1-xGa_xAs multiple quantum well structures. The experimental results show that the largest contributions involve transitions from Γ₆ (heavy hole) ground state to Γ₆ (heavy hole) first excited state at the center of the well, and are in good agreement with recent theoretical calculations.

Original language	English (US)
Pages (from-to)	537-540
Number of pages	4
Journal	Solid State Communications
Volume	59
Issue number	8
DOIs	https://doi.org/10.1016/0038-1098(86)90053-0
State	Published - Aug 1986

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Materials Chemistry

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10.1016/0038-1098(86)90053-0

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title = "Electronic Raman scattering from carbon acceptors in undoped GaAs-Al1-xGaxAs multiple quantum wells",

abstract = "Electronic Raman scattering related to carbon acceptor states was observed in undoped GaAs-Al1-xGaxAs multiple quantum well structures. The experimental results show that the largest contributions involve transitions from Γ6 (heavy hole) ground state to Γ6 (heavy hole) first excited state at the center of the well, and are in good agreement with recent theoretical calculations.",

author = "Kong-Thon Tsen and J. Klem and H. Morko{\c c}",

year = "1986",

month = aug,

doi = "10.1016/0038-1098(86)90053-0",

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AU - Tsen, Kong-Thon

AU - Klem, J.

AU - Morkoç, H.

PY - 1986/8

Y1 - 1986/8

N2 - Electronic Raman scattering related to carbon acceptor states was observed in undoped GaAs-Al1-xGaxAs multiple quantum well structures. The experimental results show that the largest contributions involve transitions from Γ6 (heavy hole) ground state to Γ6 (heavy hole) first excited state at the center of the well, and are in good agreement with recent theoretical calculations.

AB - Electronic Raman scattering related to carbon acceptor states was observed in undoped GaAs-Al1-xGaxAs multiple quantum well structures. The experimental results show that the largest contributions involve transitions from Γ6 (heavy hole) ground state to Γ6 (heavy hole) first excited state at the center of the well, and are in good agreement with recent theoretical calculations.

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Electronic Raman scattering from carbon acceptors in undoped GaAs-Al_1-xGa_xAs multiple quantum wells

Abstract

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