Abstract

Electron mobility in narrow, rectangular silicon nanowires is calculated using a Schrödinger-Monte-CarloPoisson transport simulator. Mobility lowering due to the carrier scattering with confined phonons in narrow wires and the influence of surface roughness within Ando's model are investigated.

Original languageEnglish (US)
Title of host publication2006 6th IEEE Conference on Nanotechnology, IEEE-NANO 2006
Pages20-22
Number of pages3
Volume1
StatePublished - 2006
Event2006 6th IEEE Conference on Nanotechnology, IEEE-NANO 2006 - Cincinnati, OH, United States
Duration: Jun 17 2006Jun 20 2006

Other

Other2006 6th IEEE Conference on Nanotechnology, IEEE-NANO 2006
CountryUnited States
CityCincinnati, OH
Period6/17/066/20/06

Fingerprint

Electron mobility
Silicon
Phonons
Electronic properties
Nanowires
Simulators
Surface roughness
Wire
Scattering

Keywords

  • Confined phonons
  • Silicon nanowire
  • Surface roughness

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Materials Science(all)

Cite this

Ramayya, E. B., Knezevic, I., Vasileska, D., & Goodnick, S. (2006). Electronic properties of silicon nanowires: Confined phonons and surface roughness. In 2006 6th IEEE Conference on Nanotechnology, IEEE-NANO 2006 (Vol. 1, pp. 20-22). [1717006]

Electronic properties of silicon nanowires : Confined phonons and surface roughness. / Ramayya, E. B.; Knezevic, I.; Vasileska, Dragica; Goodnick, Stephen.

2006 6th IEEE Conference on Nanotechnology, IEEE-NANO 2006. Vol. 1 2006. p. 20-22 1717006.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Ramayya, EB, Knezevic, I, Vasileska, D & Goodnick, S 2006, Electronic properties of silicon nanowires: Confined phonons and surface roughness. in 2006 6th IEEE Conference on Nanotechnology, IEEE-NANO 2006. vol. 1, 1717006, pp. 20-22, 2006 6th IEEE Conference on Nanotechnology, IEEE-NANO 2006, Cincinnati, OH, United States, 6/17/06.
Ramayya EB, Knezevic I, Vasileska D, Goodnick S. Electronic properties of silicon nanowires: Confined phonons and surface roughness. In 2006 6th IEEE Conference on Nanotechnology, IEEE-NANO 2006. Vol. 1. 2006. p. 20-22. 1717006
Ramayya, E. B. ; Knezevic, I. ; Vasileska, Dragica ; Goodnick, Stephen. / Electronic properties of silicon nanowires : Confined phonons and surface roughness. 2006 6th IEEE Conference on Nanotechnology, IEEE-NANO 2006. Vol. 1 2006. pp. 20-22
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