Electronic properties of silicon nanowires: Confined phonons and surface roughness

E. B. Ramayya; I. Knezevic; Dragica Vasileska; Stephen Goodnick

doi:10.1109/nano.2006.247556

Electronic properties of silicon nanowires: Confined phonons and surface roughness

E. B. Ramayya, I. Knezevic, Dragica Vasileska, Stephen Goodnick

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Abstract

Electron mobility in narrow, rectangular silicon nanowires is calculated using a Schrödinger-Monte-CarloPoisson transport simulator. Mobility lowering due to the carrier scattering with confined phonons in narrow wires and the influence of surface roughness within Ando's model are investigated.

Original language	English (US)
Title of host publication	2006 6th IEEE Conference on Nanotechnology, IEEE-NANO 2006
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	20-22
Number of pages	3
ISBN (Print)	1424400783, 9781424400782
DOIs	https://doi.org/10.1109/nano.2006.247556
State	Published - 2006
Event	2006 6th IEEE Conference on Nanotechnology, IEEE-NANO 2006 - Cincinnati, OH, United States Duration: Jun 17 2006 → Jun 20 2006

Publication series

Name	2006 6th IEEE Conference on Nanotechnology, IEEE-NANO 2006
Volume	1

Other

Other	2006 6th IEEE Conference on Nanotechnology, IEEE-NANO 2006
Country/Territory	United States
City	Cincinnati, OH
Period	6/17/06 → 6/20/06

Keywords

Confined phonons
Silicon nanowire
Surface roughness

ASJC Scopus subject areas

Electrical and Electronic Engineering
General Materials Science

Access to Document

10.1109/nano.2006.247556

Cite this

Ramayya, E. B., Knezevic, I., Vasileska, D., & Goodnick, S. (2006). Electronic properties of silicon nanowires: Confined phonons and surface roughness. In 2006 6th IEEE Conference on Nanotechnology, IEEE-NANO 2006 (pp. 20-22). Article 1717006 (2006 6th IEEE Conference on Nanotechnology, IEEE-NANO 2006; Vol. 1). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/nano.2006.247556

Electronic properties of silicon nanowires: Confined phonons and surface roughness. / Ramayya, E. B.; Knezevic, I.; Vasileska, Dragica et al.
2006 6th IEEE Conference on Nanotechnology, IEEE-NANO 2006. Institute of Electrical and Electronics Engineers Inc., 2006. p. 20-22 1717006 (2006 6th IEEE Conference on Nanotechnology, IEEE-NANO 2006; Vol. 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Ramayya, EB, Knezevic, I, Vasileska, D & Goodnick, S 2006, Electronic properties of silicon nanowires: Confined phonons and surface roughness. in 2006 6th IEEE Conference on Nanotechnology, IEEE-NANO 2006., 1717006, 2006 6th IEEE Conference on Nanotechnology, IEEE-NANO 2006, vol. 1, Institute of Electrical and Electronics Engineers Inc., pp. 20-22, 2006 6th IEEE Conference on Nanotechnology, IEEE-NANO 2006, Cincinnati, OH, United States, 6/17/06. https://doi.org/10.1109/nano.2006.247556

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abstract = "Electron mobility in narrow, rectangular silicon nanowires is calculated using a Schr{\"o}dinger-Monte-CarloPoisson transport simulator. Mobility lowering due to the carrier scattering with confined phonons in narrow wires and the influence of surface roughness within Ando's model are investigated.",

keywords = "Confined phonons, Silicon nanowire, Surface roughness",

author = "Ramayya, {E. B.} and I. Knezevic and Dragica Vasileska and Stephen Goodnick",

year = "2006",

doi = "10.1109/nano.2006.247556",

language = "English (US)",

isbn = "1424400783",

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AU - Goodnick, Stephen

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AB - Electron mobility in narrow, rectangular silicon nanowires is calculated using a Schrödinger-Monte-CarloPoisson transport simulator. Mobility lowering due to the carrier scattering with confined phonons in narrow wires and the influence of surface roughness within Ando's model are investigated.

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KW - Silicon nanowire

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PB - Institute of Electrical and Electronics Engineers Inc.

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ER -

Electronic properties of silicon nanowires: Confined phonons and surface roughness

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