Abstract

Electron mobility in narrow, rectangular silicon nanowires is calculated using a Schrödinger-Monte-CarloPoisson transport simulator. Mobility lowering due to the carrier scattering with confined phonons in narrow wires and the influence of surface roughness within Ando's model are investigated.

Original languageEnglish (US)
Title of host publication2006 6th IEEE Conference on Nanotechnology, IEEE-NANO 2006
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages20-22
Number of pages3
ISBN (Print)1424400783, 9781424400782
DOIs
StatePublished - Jan 1 2006
Event2006 6th IEEE Conference on Nanotechnology, IEEE-NANO 2006 - Cincinnati, OH, United States
Duration: Jun 17 2006Jun 20 2006

Publication series

Name2006 6th IEEE Conference on Nanotechnology, IEEE-NANO 2006
Volume1

Other

Other2006 6th IEEE Conference on Nanotechnology, IEEE-NANO 2006
CountryUnited States
CityCincinnati, OH
Period6/17/066/20/06

Keywords

  • Confined phonons
  • Silicon nanowire
  • Surface roughness

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Materials Science(all)

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  • Cite this

    Ramayya, E. B., Knezevic, I., Vasileska, D., & Goodnick, S. (2006). Electronic properties of silicon nanowires: Confined phonons and surface roughness. In 2006 6th IEEE Conference on Nanotechnology, IEEE-NANO 2006 (pp. 20-22). [1717006] (2006 6th IEEE Conference on Nanotechnology, IEEE-NANO 2006; Vol. 1). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/nano.2006.247556