TY - JOUR
T1 - Electronic properties of metal/III-V semiconductor interfaces
AU - Lindau, I.
AU - Kendelewicz, T.
AU - Newman, N.
AU - List, R. S.
AU - Williams, M. D.
AU - Spicer, W. E.
N1 - Funding Information:
This work was supportedb y DARPA and ONR underc ontractN 00014-83-K-0073. Some experimentwse rep erformeda t the StanfordS ynchrotronR adiation Laboratoryw hich is supportedb y DOE, Office of Basic EnergyS ciences, and NSF, Division of MaterialsR esearch.
PY - 1985/10/3
Y1 - 1985/10/3
N2 - In this paper, we give a short status report on the electronic properties of metal/III-V semiconductor interfaces. A large numer of metals, ranging from strongly reactive Ni, Co, Cr, Mn, Pd and Al to less reactive or nonreactive Cu, Ag, Au, Ga, Sn and In, have been studied for GaAs(110) and InP(110) systematically with the intent to correlate the interfacial chemistry with the Schottky barrier formation. Soft X-ray photoemission spectroscopy based on synchrotron radiation has been used to characterized the chemical reactions at the interface on an atomic scale, and the barrier heights for these structures have been compared to those for thick metal films prepared under identical conditions and measured with standard electrical methods. This review will illustrate, with a few examples for metal overlayers (Ni, Al, In) on InP(110), the current status of this field.
AB - In this paper, we give a short status report on the electronic properties of metal/III-V semiconductor interfaces. A large numer of metals, ranging from strongly reactive Ni, Co, Cr, Mn, Pd and Al to less reactive or nonreactive Cu, Ag, Au, Ga, Sn and In, have been studied for GaAs(110) and InP(110) systematically with the intent to correlate the interfacial chemistry with the Schottky barrier formation. Soft X-ray photoemission spectroscopy based on synchrotron radiation has been used to characterized the chemical reactions at the interface on an atomic scale, and the barrier heights for these structures have been compared to those for thick metal films prepared under identical conditions and measured with standard electrical methods. This review will illustrate, with a few examples for metal overlayers (Ni, Al, In) on InP(110), the current status of this field.
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U2 - 10.1016/0039-6028(85)90953-7
DO - 10.1016/0039-6028(85)90953-7
M3 - Article
AN - SCOPUS:7644231857
SN - 0039-6028
VL - 162
SP - 591
EP - 604
JO - Surface Science
JF - Surface Science
IS - 1-3
ER -