Electronic properties of metal/III-V semiconductor interfaces

I. Lindau, T. Kendelewicz, N. Newman, R. S. List, M. D. Williams, W. E. Spicer

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Abstract

In this paper, we give a short status report on the electronic properties of metal/III-V semiconductor interfaces. A large numer of metals, ranging from strongly reactive Ni, Co, Cr, Mn, Pd and Al to less reactive or nonreactive Cu, Ag, Au, Ga, Sn and In, have been studied for GaAs(110) and InP(110) systematically with the intent to correlate the interfacial chemistry with the Schottky barrier formation. Soft X-ray photoemission spectroscopy based on synchrotron radiation has been used to characterized the chemical reactions at the interface on an atomic scale, and the barrier heights for these structures have been compared to those for thick metal films prepared under identical conditions and measured with standard electrical methods. This review will illustrate, with a few examples for metal overlayers (Ni, Al, In) on InP(110), the current status of this field.

Original languageEnglish (US)
Pages (from-to)591-604
Number of pages14
JournalSurface Science
Volume162
Issue number1-3
DOIs
StatePublished - Oct 3 1985
Externally publishedYes

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ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

Cite this

Lindau, I., Kendelewicz, T., Newman, N., List, R. S., Williams, M. D., & Spicer, W. E. (1985). Electronic properties of metal/III-V semiconductor interfaces. Surface Science, 162(1-3), 591-604. https://doi.org/10.1016/0039-6028(85)90953-7