Electronic properties of an amorphous solid. III. The cohesive energy and the density of states

M. F. Thorpe, D. Weaire, R. Alben

Research output: Contribution to journalArticlepeer-review

75 Scopus citations

Abstract

The effect of topological disorder on the cohesive energy and the electronic density of states of amorphous Si and Ge is investigated. The methods used include moment expansions and various exactly soluble models that include the Bethe lattice and Husimi cactus lattices, for which an extremely compact derivation of the density of states is presented. An isolated topological defect in a diamond cubic lattice is also studied. The question of the existence of square-root band edges in topologically disordered systems is examined. A review of recent experimental evidence, relating to the shape of the density of states, is given.

Original languageEnglish (US)
Pages (from-to)3777-3788
Number of pages12
JournalPhysical Review B
Volume7
Issue number8
DOIs
StatePublished - Jan 1 1973

ASJC Scopus subject areas

  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Electronic properties of an amorphous solid. III. The cohesive energy and the density of states'. Together they form a unique fingerprint.

Cite this