Electronic ionization induced atom migration in spinel MgAl 2O4

Nan Jiang, John Spence

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

We report direct spectroscopic evidence for atom migration during the initial stage of electron irradiation in spinel MgAl2O4. Time-dependent electron energy-loss spectroscopy of the Mg and Al L23 edges shows that both Mg and Al have a tendency to occupy the octahedral interstices under electron irradiation, along with a slight expansion of the Al-O bonding distance, but there is little change in the structural framework of oxygen. The process is irreversible at room temperature.

Original languageEnglish (US)
Pages (from-to)147-151
Number of pages5
JournalJournal of Nuclear Materials
Volume403
Issue number1-3
DOIs
StatePublished - Aug 2010

Fingerprint

Electron irradiation
electron irradiation
Ionization
spinel
ionization
interstices
Atoms
irreversible processes
Electron energy loss spectroscopy
electronics
atoms
tendencies
energy dissipation
electron energy
Oxygen
expansion
room temperature
oxygen
spectroscopy
Temperature

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Materials Science(all)
  • Nuclear Energy and Engineering

Cite this

Electronic ionization induced atom migration in spinel MgAl 2O4 . / Jiang, Nan; Spence, John.

In: Journal of Nuclear Materials, Vol. 403, No. 1-3, 08.2010, p. 147-151.

Research output: Contribution to journalArticle

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