Electronic density of states of amorphous Si and Ge

M. F. Thorpe, D. Weaire

Research output: Contribution to journalArticlepeer-review

77 Scopus citations

Abstract

The density of states of the valence and conduction bands of Si and Ge are discussed using a simple tight-binding Hamiltonian. It is shown that certain features of the density of states for the case of the diamond structure are related to the short-range order and hence should be retained in the amorphous state while others depend on long-range order and are expected to disappear.

Original languageEnglish (US)
Pages (from-to)1581-1584
Number of pages4
JournalPhysical Review Letters
Volume27
Issue number23
DOIs
StatePublished - Jan 1 1971

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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