Electronic density of states of amorphous Si and Ge

Michael Thorpe, D. Weaire

Research output: Contribution to journalArticle

77 Citations (Scopus)

Abstract

The density of states of the valence and conduction bands of Si and Ge are discussed using a simple tight-binding Hamiltonian. It is shown that certain features of the density of states for the case of the diamond structure are related to the short-range order and hence should be retained in the amorphous state while others depend on long-range order and are expected to disappear.

Original languageEnglish (US)
Pages (from-to)1581-1584
Number of pages4
JournalPhysical Review Letters
Volume27
Issue number23
DOIs
StatePublished - 1971
Externally publishedYes

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electronics
conduction bands
diamonds
valence

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Electronic density of states of amorphous Si and Ge. / Thorpe, Michael; Weaire, D.

In: Physical Review Letters, Vol. 27, No. 23, 1971, p. 1581-1584.

Research output: Contribution to journalArticle

Thorpe, Michael ; Weaire, D. / Electronic density of states of amorphous Si and Ge. In: Physical Review Letters. 1971 ; Vol. 27, No. 23. pp. 1581-1584.
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