Abstract

Electron mobility and thermal conductivity of silicon nanowires (SiNWs) of different cross sections were calculated by including scattering of electrons due to confined acoustic phonons, optical phonons, and surface roughness. A reduction in the acoustic phonon group velocity due to the spatial confinement in SiNWs is found to result in lower electron mobility and thermal conductivity compared to the bulk phonon approximation. Among the square SiNWs considered, a SiNW of cross section 6 nm × 6 nm was found to have the highest electron mobility due to the interplay of volume inversion and subband modulation.

Original languageEnglish (US)
Title of host publicationECS Transactions - 13th International Symposium on Silicon-On-Insulator Technology and Devices
Pages159-164
Number of pages6
Edition4
DOIs
StatePublished - Dec 1 2007
Event13th International Symposium on Silicon-On-Insulator Technology and Devices - 211th ECS Meeting - Chicago, IL, United States
Duration: May 6 2007May 11 2007

Publication series

NameECS Transactions
Number4
Volume6
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other13th International Symposium on Silicon-On-Insulator Technology and Devices - 211th ECS Meeting
CountryUnited States
CityChicago, IL
Period5/6/075/11/07

ASJC Scopus subject areas

  • Engineering(all)

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  • Cite this

    Ramayya, E. B., Vasileska, D., Goodnick, S., & Knezevic, I. (2007). Electronic and thermal properties of silicon nanowires. In ECS Transactions - 13th International Symposium on Silicon-On-Insulator Technology and Devices (4 ed., pp. 159-164). (ECS Transactions; Vol. 6, No. 4). https://doi.org/10.1149/1.2728855