Abstract

Electron mobility and thermal conductivity of silicon nanowires (SiNWs) of different cross sections were calculated by including scattering of electrons due to confined acoustic phonons, optical phonons, and surface roughness. A reduction in the acoustic phonon group velocity due to the spatial confinement in SiNWs is found to result in lower electron mobility and thermal conductivity compared to the bulk phonon approximation. Among the square SiNWs considered, a SiNW of cross section 6 nm × 6 nm was found to have the highest electron mobility due to the interplay of volume inversion and subband modulation.

Original languageEnglish (US)
Title of host publicationECS Transactions
Pages159-164
Number of pages6
Volume6
Edition4
DOIs
StatePublished - 2007
Event13th International Symposium on Silicon-On-Insulator Technology and Devices - 211th ECS Meeting - Chicago, IL, United States
Duration: May 6 2007May 11 2007

Other

Other13th International Symposium on Silicon-On-Insulator Technology and Devices - 211th ECS Meeting
CountryUnited States
CityChicago, IL
Period5/6/075/11/07

Fingerprint

Electronic properties
Nanowires
Electron mobility
Thermodynamic properties
Silicon
Phonons
Thermal conductivity
Acoustics
Surface roughness
Modulation
Scattering
Electrons

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Ramayya, E. B., Vasileska, D., Goodnick, S., & Knezevic, I. (2007). Electronic and thermal properties of silicon nanowires. In ECS Transactions (4 ed., Vol. 6, pp. 159-164) https://doi.org/10.1149/1.2728855

Electronic and thermal properties of silicon nanowires. / Ramayya, E. B.; Vasileska, Dragica; Goodnick, Stephen; Knezevic, I.

ECS Transactions. Vol. 6 4. ed. 2007. p. 159-164.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Ramayya, EB, Vasileska, D, Goodnick, S & Knezevic, I 2007, Electronic and thermal properties of silicon nanowires. in ECS Transactions. 4 edn, vol. 6, pp. 159-164, 13th International Symposium on Silicon-On-Insulator Technology and Devices - 211th ECS Meeting, Chicago, IL, United States, 5/6/07. https://doi.org/10.1149/1.2728855
Ramayya EB, Vasileska D, Goodnick S, Knezevic I. Electronic and thermal properties of silicon nanowires. In ECS Transactions. 4 ed. Vol. 6. 2007. p. 159-164 https://doi.org/10.1149/1.2728855
Ramayya, E. B. ; Vasileska, Dragica ; Goodnick, Stephen ; Knezevic, I. / Electronic and thermal properties of silicon nanowires. ECS Transactions. Vol. 6 4. ed. 2007. pp. 159-164
@inproceedings{140142fd440143b3bd96e79679586102,
title = "Electronic and thermal properties of silicon nanowires",
abstract = "Electron mobility and thermal conductivity of silicon nanowires (SiNWs) of different cross sections were calculated by including scattering of electrons due to confined acoustic phonons, optical phonons, and surface roughness. A reduction in the acoustic phonon group velocity due to the spatial confinement in SiNWs is found to result in lower electron mobility and thermal conductivity compared to the bulk phonon approximation. Among the square SiNWs considered, a SiNW of cross section 6 nm × 6 nm was found to have the highest electron mobility due to the interplay of volume inversion and subband modulation.",
author = "Ramayya, {E. B.} and Dragica Vasileska and Stephen Goodnick and I. Knezevic",
year = "2007",
doi = "10.1149/1.2728855",
language = "English (US)",
isbn = "9781566775533",
volume = "6",
pages = "159--164",
booktitle = "ECS Transactions",
edition = "4",

}

TY - GEN

T1 - Electronic and thermal properties of silicon nanowires

AU - Ramayya, E. B.

AU - Vasileska, Dragica

AU - Goodnick, Stephen

AU - Knezevic, I.

PY - 2007

Y1 - 2007

N2 - Electron mobility and thermal conductivity of silicon nanowires (SiNWs) of different cross sections were calculated by including scattering of electrons due to confined acoustic phonons, optical phonons, and surface roughness. A reduction in the acoustic phonon group velocity due to the spatial confinement in SiNWs is found to result in lower electron mobility and thermal conductivity compared to the bulk phonon approximation. Among the square SiNWs considered, a SiNW of cross section 6 nm × 6 nm was found to have the highest electron mobility due to the interplay of volume inversion and subband modulation.

AB - Electron mobility and thermal conductivity of silicon nanowires (SiNWs) of different cross sections were calculated by including scattering of electrons due to confined acoustic phonons, optical phonons, and surface roughness. A reduction in the acoustic phonon group velocity due to the spatial confinement in SiNWs is found to result in lower electron mobility and thermal conductivity compared to the bulk phonon approximation. Among the square SiNWs considered, a SiNW of cross section 6 nm × 6 nm was found to have the highest electron mobility due to the interplay of volume inversion and subband modulation.

UR - http://www.scopus.com/inward/record.url?scp=45249089238&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=45249089238&partnerID=8YFLogxK

U2 - 10.1149/1.2728855

DO - 10.1149/1.2728855

M3 - Conference contribution

AN - SCOPUS:45249089238

SN - 9781566775533

VL - 6

SP - 159

EP - 164

BT - ECS Transactions

ER -