We report the use of chalcogenidometallate clusters as a solution-processable precursor to SnSe2 for phase change memory applications. This precursor is spin-coated onto substrates and then thermally decomposed into a crystalline SnSe2 film. Laser testing of our SnSe2 films indicate very fast recrystallization times of 20 ns. We also fabricate simple planar SnSe2 electronic switching devices that demonstrate switching between ON and OFF resistance states with resistance ratios varying from 7-76. The simple cell design resulted in poor cycling endurance. To demonstrate the precursor's applicability to advanced via-geometry memory devices, we use the precursor to create void-free SnSe2 structures inside nanowells of ∼25 nm in diameter and ∼40 nm in depth.
ASJC Scopus subject areas
- Physics and Astronomy(all)