Electronic and optical switching of solution-phase deposited SnSe 2 phase change memory material

Robert Y. Wang, Marissa A. Caldwell, Rakesh Gnana David Jeyasingh, Shaul Aloni, Robert M. Shelby, H. S.Philip Wong, Delia J. Milliron

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Abstract

We report the use of chalcogenidometallate clusters as a solution-processable precursor to SnSe2 for phase change memory applications. This precursor is spin-coated onto substrates and then thermally decomposed into a crystalline SnSe2 film. Laser testing of our SnSe2 films indicate very fast recrystallization times of 20 ns. We also fabricate simple planar SnSe2 electronic switching devices that demonstrate switching between ON and OFF resistance states with resistance ratios varying from 7-76. The simple cell design resulted in poor cycling endurance. To demonstrate the precursor's applicability to advanced via-geometry memory devices, we use the precursor to create void-free SnSe2 structures inside nanowells of ∼25 nm in diameter and ∼40 nm in depth.

Original languageEnglish (US)
Article number113506
JournalJournal of Applied Physics
Volume109
Issue number11
DOIs
StatePublished - Jun 1 2011
Externally publishedYes

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ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Wang, R. Y., Caldwell, M. A., Jeyasingh, R. G. D., Aloni, S., Shelby, R. M., Wong, H. S. P., & Milliron, D. J. (2011). Electronic and optical switching of solution-phase deposited SnSe 2 phase change memory material. Journal of Applied Physics, 109(11), [113506]. https://doi.org/10.1063/1.3587187