Electron velocity saturation and intervalley transfer in monolayer MoS2

D. K. Ferry

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Monolayer MoS2 is a material with a rich history and that is being suggested for many applications in electronics, including novel electron devices. Recent experiments has shown that it has a saturation velocity at high electric fields well below other electronic materials such as Si. This is a very important property that is crucial to high performance electron devices. Here, we study this property with ensemble Monte Carlo simulations of the electron transport. We find that the velocity at high electric fields is larger than the experiments, and does not show a saturation up to 100 kV cm-1. In addition, the transport at high fields is dominated by inter-valley transfer to the T valleys.

Original languageEnglish (US)
Article number11LT01
JournalSemiconductor Science and Technology
Volume31
Issue number11
DOIs
StatePublished - Sep 27 2016

Fingerprint

Electron devices
Monolayers
Electric fields
saturation
valleys
Electrons
electrons
Electronic equipment
electric fields
Experiments
electronics
histories
simulation
Electron Transport
Monte Carlo simulation

Keywords

  • devices
  • electron transport
  • nanostructures
  • phonon scattering

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering

Cite this

Electron velocity saturation and intervalley transfer in monolayer MoS2 . / Ferry, D. K.

In: Semiconductor Science and Technology, Vol. 31, No. 11, 11LT01, 27.09.2016.

Research output: Contribution to journalArticle

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