TY - GEN

T1 - Electron velocity overshoot in GaAs studied by subpicosecond Raman spectroscopy - carrier density dependence

AU - Tsen, Kong-Thon

PY - 1999/1/1

Y1 - 1999/1/1

N2 - Electron transient transport in a GaAs-based p-i-n nanostructure under the application of an electric field has been studied by transient Raman spectroscopy at T = 80 K. The non-equilibrium electron distribution function and electron drift velocity were measured at an applied electric field intensity of E = 25 kV/cm and for various injected electron-hole pair densities ranging from 1017 cm-3 to 1019 cm-3. Our experimental results show that, the electron distribution is very much out of equilibrium for n ≅ 1017 cm-3; however, as the electron-hole pair density increases the electron distribution function approaches that of the equilibrium case, in particular, as the carrier density increases to n ≅ 1019 cm-3, electron distribution becomes very much in equilibrium and electron drift velocity becomes almost zero. These results have been explained by the effects of momentum randomization and screening of effective electric field by the injected electron-hole pairs.

AB - Electron transient transport in a GaAs-based p-i-n nanostructure under the application of an electric field has been studied by transient Raman spectroscopy at T = 80 K. The non-equilibrium electron distribution function and electron drift velocity were measured at an applied electric field intensity of E = 25 kV/cm and for various injected electron-hole pair densities ranging from 1017 cm-3 to 1019 cm-3. Our experimental results show that, the electron distribution is very much out of equilibrium for n ≅ 1017 cm-3; however, as the electron-hole pair density increases the electron distribution function approaches that of the equilibrium case, in particular, as the carrier density increases to n ≅ 1019 cm-3, electron distribution becomes very much in equilibrium and electron drift velocity becomes almost zero. These results have been explained by the effects of momentum randomization and screening of effective electric field by the injected electron-hole pairs.

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M3 - Conference contribution

AN - SCOPUS:0032596808

SN - 0819430943

T3 - Proceedings of SPIE - The International Society for Optical Engineering

SP - 272

EP - 278

BT - Proceedings of SPIE - The International Society for Optical Engineering

PB - Society of Photo-Optical Instrumentation Engineers

T2 - Proceedings of the 1999 Ultrafast Phenomena in Semiconductors III

Y2 - 27 January 1999 through 29 January 1999

ER -