Electron velocity overshoot in GaAs studied by subpicosecond Raman spectroscopy - carrier density dependence

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Electron transient transport in a GaAs-based p-i-n nanostructure under the application of an electric field has been studied by transient Raman spectroscopy at T = 80 K. The non-equilibrium electron distribution function and electron drift velocity were measured at an applied electric field intensity of E = 25 kV/cm and for various injected electron-hole pair densities ranging from 1017 cm-3 to 1019 cm-3. Our experimental results show that, the electron distribution is very much out of equilibrium for n ≅ 1017 cm-3; however, as the electron-hole pair density increases the electron distribution function approaches that of the equilibrium case, in particular, as the carrier density increases to n ≅ 1019 cm-3, electron distribution becomes very much in equilibrium and electron drift velocity becomes almost zero. These results have been explained by the effects of momentum randomization and screening of effective electric field by the injected electron-hole pairs.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
PublisherSociety of Photo-Optical Instrumentation Engineers
Pages272-278
Number of pages7
ISBN (Print)0819430943
StatePublished - Jan 1 1999
EventProceedings of the 1999 Ultrafast Phenomena in Semiconductors III - San Jose, CA, USA
Duration: Jan 27 1999Jan 29 1999

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume3624
ISSN (Print)0277-786X

Other

OtherProceedings of the 1999 Ultrafast Phenomena in Semiconductors III
CitySan Jose, CA, USA
Period1/27/991/29/99

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Tsen, K-T. (1999). Electron velocity overshoot in GaAs studied by subpicosecond Raman spectroscopy - carrier density dependence. In Proceedings of SPIE - The International Society for Optical Engineering (pp. 272-278). (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 3624). Society of Photo-Optical Instrumentation Engineers.