Electron velocity overshoot in a GaAs-based p-i-n nanostructure semiconductor observed by transient subpicosecond Raman spectroscopy

E. D. Grann, Kong-Thon Tsen, O. F. Sankey, D. K. Ferry, A. Salvador, A. Botcharev, H. Morkoç

Research output: Contribution to journalArticlepeer-review

29 Scopus citations

Abstract

We report direct measurements of nonequilibrium electron distributions and electron drift velocities in a GaAs-based p-i-n nanostructure semiconductor by using transient subpicosecond Raman spectroscopy. Experimental conditions are such that the velocity overshoot phenomenon dominates the transport properties of the photoexcited carriers. These experimental results are compared with ensemble Monte Carlo calculations.

Original languageEnglish (US)
Number of pages1
JournalApplied Physics Letters
Volume67
DOIs
StatePublished - Dec 1 1995

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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