Electron velocity overshoot in a GaAs-based p-i-n nanostructure semiconductor observed by transient subpicosecond Raman spectroscopy

E. D. Grann; Kong-Thon Tsen; O. F. Sankey; D. K. Ferry; A. Salvador; A. Botcharev; H. Morkoç

doi:10.1063/1.115041

Electron velocity overshoot in a GaAs-based p-i-n nanostructure semiconductor observed by transient subpicosecond Raman spectroscopy

E. D. Grann, Kong-Thon Tsen, O. F. Sankey, D. K. Ferry, A. Salvador, A. Botcharev, H. Morkoç

Research output: Contribution to journal › Article › peer-review

31 Scopus citations

Abstract

We report direct measurements of nonequilibrium electron distributions and electron drift velocities in a GaAs-based p-i-n nanostructure semiconductor by using transient subpicosecond Raman spectroscopy. Experimental conditions are such that the velocity overshoot phenomenon dominates the transport properties of the photoexcited carriers. These experimental results are compared with ensemble Monte Carlo calculations.

Original language	English (US)
Pages (from-to)	1760
Number of pages	1
Journal	Applied Physics Letters
Volume	67
DOIs	https://doi.org/10.1063/1.115041
State	Published - 1995

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.115041

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abstract = "We report direct measurements of nonequilibrium electron distributions and electron drift velocities in a GaAs-based p-i-n nanostructure semiconductor by using transient subpicosecond Raman spectroscopy. Experimental conditions are such that the velocity overshoot phenomenon dominates the transport properties of the photoexcited carriers. These experimental results are compared with ensemble Monte Carlo calculations.",

author = "Grann, {E. D.} and Kong-Thon Tsen and Sankey, {O. F.} and Ferry, {D. K.} and A. Salvador and A. Botcharev and H. Morko{\c c}",

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AU - Grann, E. D.

AU - Tsen, Kong-Thon

AU - Sankey, O. F.

AU - Ferry, D. K.

AU - Salvador, A.

AU - Botcharev, A.

AU - Morkoç, H.

PY - 1995

Y1 - 1995

N2 - We report direct measurements of nonequilibrium electron distributions and electron drift velocities in a GaAs-based p-i-n nanostructure semiconductor by using transient subpicosecond Raman spectroscopy. Experimental conditions are such that the velocity overshoot phenomenon dominates the transport properties of the photoexcited carriers. These experimental results are compared with ensemble Monte Carlo calculations.

AB - We report direct measurements of nonequilibrium electron distributions and electron drift velocities in a GaAs-based p-i-n nanostructure semiconductor by using transient subpicosecond Raman spectroscopy. Experimental conditions are such that the velocity overshoot phenomenon dominates the transport properties of the photoexcited carriers. These experimental results are compared with ensemble Monte Carlo calculations.

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Electron velocity overshoot in a GaAs-based p-i-n nanostructure semiconductor observed by transient subpicosecond Raman spectroscopy

Abstract

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