Electron transport properties of a strained Si layer on a relaxed Si 1-xGex substrate by Monte Carlo simulation

H. Miyata, Toshishige Yamada, D. K. Ferry

Research output: Contribution to journalArticlepeer-review

92 Scopus citations

Abstract

The in-plane transport properties of a strained (100) Si layer on a relaxed Si1-xGex substrate are studied with an ensemble Monte Carlo technique. Similar velocity (-field) characteristics are found for strained Si with any valley splitting energy ΔE≥0.1 eV. These phonon-limited electron mobilities reach 4000 cm2/V s at 300 K, and 23 000 cm2/V s at 77 K. There is only a slight increase in the saturation velocity at both temperatures. However, a significant overshoot peak transient velocity is found to depend upon ΔE, and for ΔE=0.4 eV, reaches 4.1×107 cm/s at 300 K, and 5.2×107 cm/s at 77 K.

Original languageEnglish (US)
Pages (from-to)2661-2663
Number of pages3
JournalApplied Physics Letters
Volume62
Issue number21
DOIs
StatePublished - 1993

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint

Dive into the research topics of 'Electron transport properties of a strained Si layer on a relaxed Si <sub>1-x</sub>Ge<sub>x</sub> substrate by Monte Carlo simulation'. Together they form a unique fingerprint.

Cite this