Abstract
The in-plane transport properties of a strained (100) Si layer on a relaxed Si1-xGex substrate are studied with an ensemble Monte Carlo technique. Similar velocity (-field) characteristics are found for strained Si with any valley splitting energy ΔE≥0.1 eV. These phonon-limited electron mobilities reach 4000 cm2/V s at 300 K, and 23 000 cm2/V s at 77 K. There is only a slight increase in the saturation velocity at both temperatures. However, a significant overshoot peak transient velocity is found to depend upon ΔE, and for ΔE=0.4 eV, reaches 4.1×107 cm/s at 300 K, and 5.2×107 cm/s at 77 K.
Original language | English (US) |
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Pages (from-to) | 2661-2663 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 62 |
Issue number | 21 |
DOIs | |
State | Published - 1993 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)