Electron transport in some transition metal di-chalcogenides: MoS2 and WS2

D. K. Ferry

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The transition metal di-chalcogenides are promising single monolayer materials that hold promise for applications in several fields, including nanoelectronics. Here, I study the transport of electrons in two of these materials, MoS2 and WS2. While the low-field behavior shows very low mobility, due mostly to impurity scattering, the high-field behavior shows a relatively high saturated velocity and a high breakdown field. Complications arise due to the relative narrowness of the conduction band, and the effect of this on the transport is discussed.

Original languageEnglish (US)
Article number085003
JournalSemiconductor Science and Technology
Volume32
Issue number8
DOIs
StatePublished - Jul 4 2017

Fingerprint

Chalcogenides
chalcogenides
Transition metals
transition metals
Nanoelectronics
Conduction bands
Monolayers
conduction bands
electrons
breakdown
Scattering
Impurities
impurities
Electrons
scattering
Electron Transport

Keywords

  • devices
  • electron transport
  • nanostructures
  • phonon scattering

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering

Cite this

Electron transport in some transition metal di-chalcogenides : MoS2 and WS2. / Ferry, D. K.

In: Semiconductor Science and Technology, Vol. 32, No. 8, 085003, 04.07.2017.

Research output: Contribution to journalArticle

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