Abstract
The transition metal di-chalcogenides are promising single monolayer materials that hold promise for applications in several fields, including nanoelectronics. Here, I study the transport of electrons in two of these materials, MoS2 and WS2. While the low-field behavior shows very low mobility, due mostly to impurity scattering, the high-field behavior shows a relatively high saturated velocity and a high breakdown field. Complications arise due to the relative narrowness of the conduction band, and the effect of this on the transport is discussed.
Original language | English (US) |
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Article number | 085003 |
Journal | Semiconductor Science and Technology |
Volume | 32 |
Issue number | 8 |
DOIs | |
State | Published - Jul 4 2017 |
Keywords
- devices
- electron transport
- nanostructures
- phonon scattering
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry