ELECTRON TRANSPORT IN NARROW-GAP SEMICONDUCTORS.

R. C. Curby, D. K. Ferry

Research output: Contribution to journalArticle

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Abstract

The electron transport properties of the narrow-gap semiconductors InSb and InAs are calculated by a Monte Carlo procedure. The drift velocity and electron distribution function are found to be affected at high electric fields by the inclusion of impact ionization collisions, and the negative differential conductivity is correspondingly reduced.

Original languageEnglish (US)
Pages (from-to)569-575
Number of pages7
JournalPhysica Status Solidi (A) Applied Research
Volume20
Issue number2
Publication statusPublished - Dec 1973
Externally publishedYes

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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