The electron transport properties of the narrow-gap semiconductors InSb and InAs are calculated by a Monte Carlo procedure. The drift velocity and electron distribution function are found to be affected at high electric fields by the inclusion of impact ionization collisions, and the negative differential conductivity is correspondingly reduced.
|Original language||English (US)|
|Number of pages||7|
|Journal||Physica Status Solidi (A) Applied Research|
|Publication status||Published - Dec 1973|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics