Electron-spin-resonance study of boron-doped amorphous SixGe1-x: H alloys

M. Stutzmann, Robert Nemanich, J. Stuke

Research output: Contribution to journalArticle

22 Citations (Scopus)

Abstract

We report on ESR and Raman spectroscopy in a-SixGe1-x: H prepared by glow discharge with a 1-vol% boron-doping level. For most silicon contents x, a preferential deposition of germanium into the solid film is found. The Raman spectra show that the samples are amorphous and that no phase separation is present. Four different ESR resonances can be observed over the compositional range investigated (0<x<0.7) at 20 K: the known resonances of the Ge dangling bonds and of localized holes in Ge Ge bonding states, a signal due to carbon impurities, and a new resonance with strong negative g-value shift (g=1.925) that seems to be related to surface states. A model for the density of states in the amorphous Si-Ge alloys is proposed that can qualitatively account for the experimental results.

Original languageEnglish (US)
Pages (from-to)3595-3602
Number of pages8
JournalPhysical Review B
Volume30
Issue number7
DOIs
StatePublished - 1984
Externally publishedYes

Fingerprint

Boron
Paramagnetic resonance
electron paramagnetic resonance
boron
Germanium
Dangling bonds
Glow discharges
Surface states
Amorphous alloys
Silicon
glow discharges
Phase separation
Raman spectroscopy
Raman scattering
germanium
Carbon
Doping (additives)
Impurities
Raman spectra
impurities

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Electron-spin-resonance study of boron-doped amorphous SixGe1-x : H alloys. / Stutzmann, M.; Nemanich, Robert; Stuke, J.

In: Physical Review B, Vol. 30, No. 7, 1984, p. 3595-3602.

Research output: Contribution to journalArticle

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