Electron scatterers near the boundary in AlGaAs/GaAs quantum wires fabricated by focused ion beam implantation

M. Yamada, K. Hirakawa, T. Odagiri, Trevor Thornton, T. Ikoma

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

We systematically studied the magnetoresistance of gated AlGaAs/GaAs quantum wire structures defined by focused ion beam implantation and characterized the quality of the device boundaries in terms of the specularity factor p for various electron densities and wire widths. p is found to be independent of the electron density but strongly dependent on the distance between the channel edge and the ion implanted position. It is clarified that the most important diffusive scatterers near the boundary are the point defects with short range potential generated by high energy ion implantation.

Original languageEnglish (US)
Pages (from-to)261-264
Number of pages4
JournalSuperlattices and Microstructures
Volume11
Issue number3
DOIs
StatePublished - 1992
Externally publishedYes

Fingerprint

Semiconductor quantum wires
Focused ion beams
quantum wires
Carrier concentration
aluminum gallium arsenides
implantation
ion beams
Electrons
Magnetoresistance
Point defects
scattering
Ion Channels
Ion implantation
point defects
ion implantation
electrons
wire
Wire
Ions
ions

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Electron scatterers near the boundary in AlGaAs/GaAs quantum wires fabricated by focused ion beam implantation. / Yamada, M.; Hirakawa, K.; Odagiri, T.; Thornton, Trevor; Ikoma, T.

In: Superlattices and Microstructures, Vol. 11, No. 3, 1992, p. 261-264.

Research output: Contribution to journalArticle

@article{e5fabfc741f34c71acc99389f57c83a0,
title = "Electron scatterers near the boundary in AlGaAs/GaAs quantum wires fabricated by focused ion beam implantation",
abstract = "We systematically studied the magnetoresistance of gated AlGaAs/GaAs quantum wire structures defined by focused ion beam implantation and characterized the quality of the device boundaries in terms of the specularity factor p for various electron densities and wire widths. p is found to be independent of the electron density but strongly dependent on the distance between the channel edge and the ion implanted position. It is clarified that the most important diffusive scatterers near the boundary are the point defects with short range potential generated by high energy ion implantation.",
author = "M. Yamada and K. Hirakawa and T. Odagiri and Trevor Thornton and T. Ikoma",
year = "1992",
doi = "10.1016/0749-6036(92)90376-G",
language = "English (US)",
volume = "11",
pages = "261--264",
journal = "Superlattices and Microstructures",
issn = "0749-6036",
publisher = "Academic Press Inc.",
number = "3",

}

TY - JOUR

T1 - Electron scatterers near the boundary in AlGaAs/GaAs quantum wires fabricated by focused ion beam implantation

AU - Yamada, M.

AU - Hirakawa, K.

AU - Odagiri, T.

AU - Thornton, Trevor

AU - Ikoma, T.

PY - 1992

Y1 - 1992

N2 - We systematically studied the magnetoresistance of gated AlGaAs/GaAs quantum wire structures defined by focused ion beam implantation and characterized the quality of the device boundaries in terms of the specularity factor p for various electron densities and wire widths. p is found to be independent of the electron density but strongly dependent on the distance between the channel edge and the ion implanted position. It is clarified that the most important diffusive scatterers near the boundary are the point defects with short range potential generated by high energy ion implantation.

AB - We systematically studied the magnetoresistance of gated AlGaAs/GaAs quantum wire structures defined by focused ion beam implantation and characterized the quality of the device boundaries in terms of the specularity factor p for various electron densities and wire widths. p is found to be independent of the electron density but strongly dependent on the distance between the channel edge and the ion implanted position. It is clarified that the most important diffusive scatterers near the boundary are the point defects with short range potential generated by high energy ion implantation.

UR - http://www.scopus.com/inward/record.url?scp=0026627252&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0026627252&partnerID=8YFLogxK

U2 - 10.1016/0749-6036(92)90376-G

DO - 10.1016/0749-6036(92)90376-G

M3 - Article

AN - SCOPUS:0026627252

VL - 11

SP - 261

EP - 264

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

SN - 0749-6036

IS - 3

ER -