Electron scatterers near the boundary in AlGaAs/GaAs quantum wires fabricated by focused ion beam implantation

M. Yamada, K. Hirakawa, T. Odagiri, T. J. Thornton, T. Ikoma

Research output: Contribution to journalArticle

5 Scopus citations


We systematically studied the magnetoresistance of gated AlGaAs/GaAs quantum wire structures defined by focused ion beam implantation and characterized the quality of the device boundaries in terms of the specularity factor p for various electron densities and wire widths. p is found to be independent of the electron density but strongly dependent on the distance between the channel edge and the ion implanted position. It is clarified that the most important diffusive scatterers near the boundary are the point defects with short range potential generated by high energy ion implantation.

Original languageEnglish (US)
Pages (from-to)261-264
Number of pages4
JournalSuperlattices and Microstructures
Issue number3
StatePublished - 1992


ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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