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Dive into the research topics of 'Electron Saturation Velocity Variation in InGaAs and GaAs Channel MODFET's for Gate Lengths to 550 A'. Together they form a unique fingerprint.- Sort by
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P. R. De La Houssaye, D. R. Allee, Y. C. Pao, R. F.W. Pease, J. S. Harris, D. G. Schlom
Research output: Contribution to journal › Article › peer-review