Electron Saturation Velocity Variation in InGaAs and GaAs Channel MODFET's for Gate Lengths to 550 A

P. R. De La Houssaye, D. R. Allee, Y. C. Pao, R. F.W. Pease, J. S. Harris, D. G. Schlom

Research output: Contribution to journalArticle

20 Scopus citations

Abstract

MODFET's with InGaAs and GaAs channels have been fabricated with gate lengths between 2 μm and 550 A and have been dc characterized at room temperature. An effective electron saturation velocity was calculated for each device from the peak transconductance. The GaAs channel devices show a peak in the transconductance and saturation velocity at a gate length of approximately 0.15 μm, while the transconductance and velocity of the InGaAs channel devices are nearly constant over the entire range of gate lengths.

Original languageEnglish (US)
Pages (from-to)148-150
Number of pages3
JournalIEEE Electron Device Letters
Volume9
Issue number3
DOIs
StatePublished - Mar 1988
Externally publishedYes

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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