ELECTRON SATURATION VELOCITY VARIATION IN InGaAs AND GaAs CHANNEL MODFET's FOR GATE LENGTHS TO 550 ANGSTROM.

P. R. de la Houssaye, David Allee, Y. C. Pao, D. G. Schlom, J. S. Harris, R. F W Pease

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

MODFETs with InGaAs and GaAs channels have been fabricated with gate lengths between 2 mu m and 550 angstrom and have been DC characterized at room temperature. An effective electron saturation velocity was calculated for each device from the peak transconductance. The GaAs channel devices show a peak in the transconductance and saturation velocity at a gate length of approximately 0. 15 mu m, while the transconductance and velocity of the InGaAs channel devices are nearly constant over the entire range of gate lengths.

Original languageEnglish (US)
Pages (from-to)148-150
Number of pages3
JournalElectron device letters
Volume9
Issue number3
StatePublished - Mar 1988
Externally publishedYes

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Gates (transistor)
Transconductance
High electron mobility transistors
Electrons
gallium arsenide
Temperature

ASJC Scopus subject areas

  • Engineering(all)

Cite this

de la Houssaye, P. R., Allee, D., Pao, Y. C., Schlom, D. G., Harris, J. S., & Pease, R. F. W. (1988). ELECTRON SATURATION VELOCITY VARIATION IN InGaAs AND GaAs CHANNEL MODFET's FOR GATE LENGTHS TO 550 ANGSTROM. Electron device letters, 9(3), 148-150.

ELECTRON SATURATION VELOCITY VARIATION IN InGaAs AND GaAs CHANNEL MODFET's FOR GATE LENGTHS TO 550 ANGSTROM. / de la Houssaye, P. R.; Allee, David; Pao, Y. C.; Schlom, D. G.; Harris, J. S.; Pease, R. F W.

In: Electron device letters, Vol. 9, No. 3, 03.1988, p. 148-150.

Research output: Contribution to journalArticle

de la Houssaye, PR, Allee, D, Pao, YC, Schlom, DG, Harris, JS & Pease, RFW 1988, 'ELECTRON SATURATION VELOCITY VARIATION IN InGaAs AND GaAs CHANNEL MODFET's FOR GATE LENGTHS TO 550 ANGSTROM.', Electron device letters, vol. 9, no. 3, pp. 148-150.
de la Houssaye, P. R. ; Allee, David ; Pao, Y. C. ; Schlom, D. G. ; Harris, J. S. ; Pease, R. F W. / ELECTRON SATURATION VELOCITY VARIATION IN InGaAs AND GaAs CHANNEL MODFET's FOR GATE LENGTHS TO 550 ANGSTROM. In: Electron device letters. 1988 ; Vol. 9, No. 3. pp. 148-150.
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abstract = "MODFETs with InGaAs and GaAs channels have been fabricated with gate lengths between 2 mu m and 550 angstrom and have been DC characterized at room temperature. An effective electron saturation velocity was calculated for each device from the peak transconductance. The GaAs channel devices show a peak in the transconductance and saturation velocity at a gate length of approximately 0. 15 mu m, while the transconductance and velocity of the InGaAs channel devices are nearly constant over the entire range of gate lengths.",
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N2 - MODFETs with InGaAs and GaAs channels have been fabricated with gate lengths between 2 mu m and 550 angstrom and have been DC characterized at room temperature. An effective electron saturation velocity was calculated for each device from the peak transconductance. The GaAs channel devices show a peak in the transconductance and saturation velocity at a gate length of approximately 0. 15 mu m, while the transconductance and velocity of the InGaAs channel devices are nearly constant over the entire range of gate lengths.

AB - MODFETs with InGaAs and GaAs channels have been fabricated with gate lengths between 2 mu m and 550 angstrom and have been DC characterized at room temperature. An effective electron saturation velocity was calculated for each device from the peak transconductance. The GaAs channel devices show a peak in the transconductance and saturation velocity at a gate length of approximately 0. 15 mu m, while the transconductance and velocity of the InGaAs channel devices are nearly constant over the entire range of gate lengths.

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