Abstract
MODFET's with InGaAs and GaAs channels have been fabricated with gate lengths between 2 μm and 550 A and have been dc characterized at room temperature. An effective electron saturation velocity was calculated for each device from the peak transconductance. The GaAs channel devices show a peak in the transconductance and saturation velocity at a gate length of approximately 0.15 μm, while the transconductance and velocity of the InGaAs channel devices are nearly constant over the entire range of gate lengths.
Original language | English (US) |
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Pages (from-to) | 148-150 |
Number of pages | 3 |
Journal | IEEE Electron Device Letters |
Volume | 9 |
Issue number | 3 |
DOIs | |
State | Published - Mar 1988 |
Externally published | Yes |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering