Electron relaxation in silicon quantum dots by acoustic phonon scattering

M. Dür, A. D. Gunther, Dragica Vasileska, Stephen Goodnick

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Acoustic phonon scattering of electrons in fully quantized systems based on n-type inversion layers on a [100] surface of p-type Si is studied theoretically. The confining potential normal to the Si/SiO2 interface is modeled by a triangular quantum well. For the confinement in the lateral directions we assume a parabolic potential. The calculations reveal that the anisotropic electron-phonon interaction strongly affects the scattering rate. The calculated transition rate of electrons from the first excited to the ground state shows a strong dependence on spatial confinement and lattice temperature.

Original languageEnglish (US)
Title of host publicationExtended Abstracts of 1998 6th International Workshop on Computational Electronics, IWCE 1998
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages46-49
Number of pages4
Volume1998-October
ISBN (Electronic)0780343697, 9780780343696
DOIs
StatePublished - Jan 1 1998
Event6th International Workshop on Computational Electronics, IWCE 1998 - Osaka, Japan
Duration: Oct 19 1998Oct 21 1998

Other

Other6th International Workshop on Computational Electronics, IWCE 1998
CountryJapan
CityOsaka
Period10/19/9810/21/98

ASJC Scopus subject areas

  • Modeling and Simulation
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Mathematical Physics

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    Dür, M., Gunther, A. D., Vasileska, D., & Goodnick, S. (1998). Electron relaxation in silicon quantum dots by acoustic phonon scattering. In Extended Abstracts of 1998 6th International Workshop on Computational Electronics, IWCE 1998 (Vol. 1998-October, pp. 46-49). [742704] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IWCE.1998.742704