Electron-precise/deficient La5-xCaxGe4 (3.4 ≤ × ≤ 3.8) and Ce5-xCaxGe4 (3.0 ≤ × ≤ 3.3): Probing low-valence electron concentrations in metal-rich Gd5Si4-type germanides

Li Ming Wu, Sang Hwan Kim, Dong Seo

Research output: Contribution to journalArticle

42 Scopus citations

Abstract

We report for the first time the syntheses of electron-precise/deficient alloys, Ln5-xCaxGe4 (Ln = La, Ce; x = 3.37, 3.66, 3.82 for La; x = 3.00, 3.20, 3.26 for Ce), in the metal-rich R5Tt4 Zintl system (R = rare earth metal; Tt = Si, Ge). The new alloys extend the phase width from electron-rich to open-shell electron-deficient region in the metal-rich Zintl system and demonstrate possible occurrence of varied electron deficiencies in Zintl phases without structural changes, as a result of other existing structure-forming factors.

Original languageEnglish (US)
Pages (from-to)15682-15683
Number of pages2
JournalJournal of the American Chemical Society
Volume127
Issue number45
DOIs
StatePublished - Nov 16 2005

ASJC Scopus subject areas

  • Catalysis
  • Chemistry(all)
  • Biochemistry
  • Colloid and Surface Chemistry

Fingerprint Dive into the research topics of 'Electron-precise/deficient La<sub>5-x</sub>Ca<sub>x</sub>Ge<sub>4</sub> (3.4 ≤ × ≤ 3.8) and Ce<sub>5-x</sub>Ca<sub>x</sub>Ge<sub>4</sub> (3.0 ≤ × ≤ 3.3): Probing low-valence electron concentrations in metal-rich Gd<sub>5</sub>Si<sub>4</sub>-type germanides'. Together they form a unique fingerprint.

  • Cite this