Electron-phonon interaction studies in an In0.52Al 0.48As/In0.53Ga0.47As/In0.52Al 0.48As quantum well structure

C. Prasad, D. K. Ferry, Dragica Vasileska, H. H. Wieder

Research output: Contribution to journalConference articlepeer-review

7 Scopus citations

Abstract

Joule heating measurements are carried out over a wide range of temperatures on a two-dimensional electron gas fabricated in an In 0.52Al0.48As/In0.53Ga0.47As/In 0.52Al0.48As heterostructure system that has a 25 nm wide In0.53Ga0.47As quantum well region. The energy loss rate is observed to be an indicator of the electron-phonon coupling processes in these systems. The temperature dependence of the energy loss rate is studied from 30 mK to 30 K and points toward a possible dominant unscreened piezoelectric coupling to the acoustic modes over temperatures of 1-30 K, with boundary scattering in the ohmic contacts gaining importance at very low temperatures. The temperature decay of the energy relaxation time exhibits a T-3 behavior at high temperatures that transitions to a T -1 at lower temperatures and tends to saturation at millikelvin levels.

Original languageEnglish (US)
Pages (from-to)215-220
Number of pages6
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume19
Issue number1-2
DOIs
StatePublished - Jul 1 2003
EventFourth International Symposium on Nanostructures and Mesoscopi - Tempe, AZ, United States
Duration: Feb 17 2003Feb 21 2003

Keywords

  • Energy relaxation
  • Hot carriers
  • InA1As
  • InGaAs
  • Joule heating

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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