Electron-phonon interaction of Wurtzite GaN and its effect on high field transport

Shinya Yamakawa, Joy M. Barker, Stephen Goodnick, David K. Ferry, Marco Saraniti

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A full-band electron transport calculation in wurtzite phase GaN is reported based on a full model of the electron-phonon interaction within a Cellular Monte Carlo (CMC) approach. The deformation potential electron-phonon coupling is calculated directly from the electronic bandstructure and lattice dynamics via the rigid pseudo-ion model. A good overall agreement between theory and measured velocity-field data is obtained with this model including polar optical and piezoelectric phonon, impurity, and dislocation scattering.

Original languageEnglish (US)
Title of host publicationAIP Conference Proceedings
Pages227-228
Number of pages2
Volume772
DOIs
StatePublished - Jun 30 2005
EventPHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 - Flagstaff, AZ, United States
Duration: Jul 26 2004Jul 30 2004

Other

OtherPHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27
CountryUnited States
CityFlagstaff, AZ
Period7/26/047/30/04

Fingerprint

electron phonon interactions
wurtzite
electrons
velocity distribution
impurities
scattering
electronics
ions

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Yamakawa, S., Barker, J. M., Goodnick, S., Ferry, D. K., & Saraniti, M. (2005). Electron-phonon interaction of Wurtzite GaN and its effect on high field transport. In AIP Conference Proceedings (Vol. 772, pp. 227-228) https://doi.org/10.1063/1.1994076

Electron-phonon interaction of Wurtzite GaN and its effect on high field transport. / Yamakawa, Shinya; Barker, Joy M.; Goodnick, Stephen; Ferry, David K.; Saraniti, Marco.

AIP Conference Proceedings. Vol. 772 2005. p. 227-228.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Yamakawa, S, Barker, JM, Goodnick, S, Ferry, DK & Saraniti, M 2005, Electron-phonon interaction of Wurtzite GaN and its effect on high field transport. in AIP Conference Proceedings. vol. 772, pp. 227-228, PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27, Flagstaff, AZ, United States, 7/26/04. https://doi.org/10.1063/1.1994076
Yamakawa S, Barker JM, Goodnick S, Ferry DK, Saraniti M. Electron-phonon interaction of Wurtzite GaN and its effect on high field transport. In AIP Conference Proceedings. Vol. 772. 2005. p. 227-228 https://doi.org/10.1063/1.1994076
Yamakawa, Shinya ; Barker, Joy M. ; Goodnick, Stephen ; Ferry, David K. ; Saraniti, Marco. / Electron-phonon interaction of Wurtzite GaN and its effect on high field transport. AIP Conference Proceedings. Vol. 772 2005. pp. 227-228
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