Electron-phonon interaction of Wurtzite GaN and its effect on high field transport

Shinya Yamakawa, Joy M. Barker, Stephen Goodnick, David K. Ferry, Marco Saraniti

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A full-band electron transport calculation in wurtzite phase GaN is reported based on a full model of the electron-phonon interaction within a Cellular Monte Carlo (CMC) approach. The deformation potential electron-phonon coupling is calculated directly from the electronic bandstructure and lattice dynamics via the rigid pseudo-ion model. A good overall agreement between theory and measured velocity-field data is obtained with this model including polar optical and piezoelectric phonon, impurity, and dislocation scattering.

Original languageEnglish (US)
Title of host publicationPHYSICS OF SEMICONDUCTORS
Subtitle of host publication27th International Conference on the Physics of Semiconductors, ICPS-27
Pages227-228
Number of pages2
DOIs
StatePublished - Jun 30 2005
EventPHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 - Flagstaff, AZ, United States
Duration: Jul 26 2004Jul 30 2004

Publication series

NameAIP Conference Proceedings
Volume772
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Other

OtherPHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27
CountryUnited States
CityFlagstaff, AZ
Period7/26/047/30/04

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Yamakawa, S., Barker, J. M., Goodnick, S., Ferry, D. K., & Saraniti, M. (2005). Electron-phonon interaction of Wurtzite GaN and its effect on high field transport. In PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 (pp. 227-228). (AIP Conference Proceedings; Vol. 772). https://doi.org/10.1063/1.1994076