Electron optical-phonon interactions in ultrathin GaAs/AlAs multiple quantum wells

Kong-Thon Tsen, Keith R. Wald, Tobias Ruf, Peter Y. Yu, H. Morkoç

Research output: Contribution to journalArticle

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Abstract

Nonequilibrium populations of both confined and interface phonons generated by picosecond laser pulses in a series of GaAs/AlAs quantum wells have been studied by time-resolved picosecond Raman scattering as a function of well width. The dependence of the nonequilibrium phonon populations on well width is found to be sensitive to the theoretical model which is used to describe the electron-phonon interaction. Our data disagree with the macroscopic model of electron-phonon interaction, but they are in excellent agreement with the microscopic model proposed recently by Huang and Zhu.

Original languageEnglish (US)
Pages (from-to)2557-2560
Number of pages4
JournalPhysical Review Letters
Volume67
Issue number18
DOIs
StatePublished - 1991

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quantum wells
electron phonon interactions
electrons
interactions
phonons
Raman spectra
pulses
lasers

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Electron optical-phonon interactions in ultrathin GaAs/AlAs multiple quantum wells. / Tsen, Kong-Thon; Wald, Keith R.; Ruf, Tobias; Yu, Peter Y.; Morkoç, H.

In: Physical Review Letters, Vol. 67, No. 18, 1991, p. 2557-2560.

Research output: Contribution to journalArticle

Tsen, Kong-Thon ; Wald, Keith R. ; Ruf, Tobias ; Yu, Peter Y. ; Morkoç, H. / Electron optical-phonon interactions in ultrathin GaAs/AlAs multiple quantum wells. In: Physical Review Letters. 1991 ; Vol. 67, No. 18. pp. 2557-2560.
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