Abstract

The low-field electron mobility in rectangular silicon nanowire (SiNW) transistors was computed using a self-consistent Poisson-Schrödinger-Monte Carlo solver. The behavior of the phonon-limited and surface-roughness-limited components of the mobility was investigated by decreasing the wire width from 30 to 8 nm, the width range capturing a crossover between two-dimensional and one-dimensional electron transport. The phonon-limited mobility, which characterizes transport at low and moderate transverse fields, is found to decrease with decreasing wire width due to an increase in the electron-phonon wavefunction overlap. In contrast, the mobility at very high transverse fields, which is limited by surface roughness scattering, increases with decreasing wire width due to volume inversion. The importance of acoustic phonon confinement is also discussed briefly.

Original languageEnglish (US)
Pages (from-to)113-117
Number of pages5
JournalIEEE Transactions on Nanotechnology
Volume6
Issue number1
DOIs
StatePublished - Jan 2007

Fingerprint

Electron mobility
Nanowires
Wire
Silicon
Surface roughness
Wave functions
Transistors
Acoustics
Scattering
Electrons

Keywords

  • Electron mobility
  • Silicon nanowires
  • Surface roughness

ASJC Scopus subject areas

  • Engineering(all)
  • Hardware and Architecture

Cite this

Electron mobility in silicon nanowires. / Ramayya, Edwin B.; Vasileska, Dragica; Goodnick, Stephen; Knezevic, Irena.

In: IEEE Transactions on Nanotechnology, Vol. 6, No. 1, 01.2007, p. 113-117.

Research output: Contribution to journalArticle

Ramayya, Edwin B. ; Vasileska, Dragica ; Goodnick, Stephen ; Knezevic, Irena. / Electron mobility in silicon nanowires. In: IEEE Transactions on Nanotechnology. 2007 ; Vol. 6, No. 1. pp. 113-117.
@article{13a4f38a89fd4a659b62a309edccc925,
title = "Electron mobility in silicon nanowires",
abstract = "The low-field electron mobility in rectangular silicon nanowire (SiNW) transistors was computed using a self-consistent Poisson-Schr{\"o}dinger-Monte Carlo solver. The behavior of the phonon-limited and surface-roughness-limited components of the mobility was investigated by decreasing the wire width from 30 to 8 nm, the width range capturing a crossover between two-dimensional and one-dimensional electron transport. The phonon-limited mobility, which characterizes transport at low and moderate transverse fields, is found to decrease with decreasing wire width due to an increase in the electron-phonon wavefunction overlap. In contrast, the mobility at very high transverse fields, which is limited by surface roughness scattering, increases with decreasing wire width due to volume inversion. The importance of acoustic phonon confinement is also discussed briefly.",
keywords = "Electron mobility, Silicon nanowires, Surface roughness",
author = "Ramayya, {Edwin B.} and Dragica Vasileska and Stephen Goodnick and Irena Knezevic",
year = "2007",
month = "1",
doi = "10.1109/TNANO.2006.888521",
language = "English (US)",
volume = "6",
pages = "113--117",
journal = "IEEE Transactions on Nanotechnology",
issn = "1536-125X",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "1",

}

TY - JOUR

T1 - Electron mobility in silicon nanowires

AU - Ramayya, Edwin B.

AU - Vasileska, Dragica

AU - Goodnick, Stephen

AU - Knezevic, Irena

PY - 2007/1

Y1 - 2007/1

N2 - The low-field electron mobility in rectangular silicon nanowire (SiNW) transistors was computed using a self-consistent Poisson-Schrödinger-Monte Carlo solver. The behavior of the phonon-limited and surface-roughness-limited components of the mobility was investigated by decreasing the wire width from 30 to 8 nm, the width range capturing a crossover between two-dimensional and one-dimensional electron transport. The phonon-limited mobility, which characterizes transport at low and moderate transverse fields, is found to decrease with decreasing wire width due to an increase in the electron-phonon wavefunction overlap. In contrast, the mobility at very high transverse fields, which is limited by surface roughness scattering, increases with decreasing wire width due to volume inversion. The importance of acoustic phonon confinement is also discussed briefly.

AB - The low-field electron mobility in rectangular silicon nanowire (SiNW) transistors was computed using a self-consistent Poisson-Schrödinger-Monte Carlo solver. The behavior of the phonon-limited and surface-roughness-limited components of the mobility was investigated by decreasing the wire width from 30 to 8 nm, the width range capturing a crossover between two-dimensional and one-dimensional electron transport. The phonon-limited mobility, which characterizes transport at low and moderate transverse fields, is found to decrease with decreasing wire width due to an increase in the electron-phonon wavefunction overlap. In contrast, the mobility at very high transverse fields, which is limited by surface roughness scattering, increases with decreasing wire width due to volume inversion. The importance of acoustic phonon confinement is also discussed briefly.

KW - Electron mobility

KW - Silicon nanowires

KW - Surface roughness

UR - http://www.scopus.com/inward/record.url?scp=33846582845&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33846582845&partnerID=8YFLogxK

U2 - 10.1109/TNANO.2006.888521

DO - 10.1109/TNANO.2006.888521

M3 - Article

AN - SCOPUS:33846582845

VL - 6

SP - 113

EP - 117

JO - IEEE Transactions on Nanotechnology

JF - IEEE Transactions on Nanotechnology

SN - 1536-125X

IS - 1

ER -