Abstract

The low-field electron mobility in rectangular silicon nanowire (SiNW) transistors was computed using a self-consistent Poisson-Schrödinger-Monte Carlo solver. The behavior of the phonon-limited and surface-roughness-limited components of the mobility was investigated by decreasing the wire width from 30 to 8 nm, the width range capturing a crossover between two-dimensional and one-dimensional electron transport. The phonon-limited mobility, which characterizes transport at low and moderate transverse fields, is found to decrease with decreasing wire width due to an increase in the electron-phonon wavefunction overlap. In contrast, the mobility at very high transverse fields, which is limited by surface roughness scattering, increases with decreasing wire width due to volume inversion. The importance of acoustic phonon confinement is also discussed briefly.

Original languageEnglish (US)
Pages (from-to)113-117
Number of pages5
JournalIEEE Transactions on Nanotechnology
Volume6
Issue number1
DOIs
StatePublished - Jan 2007

Keywords

  • Electron mobility
  • Silicon nanowires
  • Surface roughness

ASJC Scopus subject areas

  • Computer Science Applications
  • Electrical and Electronic Engineering

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