Abstract

The structure of ohmic contacts AuGe/Ni/Au and their interfaces with GaAs and GaAlAs were investigated using electron microscopy techniques combined with analytical methods. The semiconductor interface in alloyed contacts was very rough, and the number of triangular protrusions increased with Al content of the GaAs. The calculations of the contact resistance according to Braslau model are presented. It is suggested that dislocations on the interfaces can contribute to low contact resistance.

Original languageEnglish (US)
Pages (from-to)135-144
Number of pages10
JournalUltramicroscopy
Volume14
Issue number1-2
DOIs
StatePublished - 1984

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Instrumentation

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