Abstract

The structure of ohmic contacts AuGe/Ni/Au and their interfaces with GaAs and GaAlAs were investigated using electron microscopy techniques combined with analytical methods. The semiconductor interface in alloyed contacts was very rough, and the number of triangular protrusions increased with Al content of the GaAs. The calculations of the contact resistance according to Braslau model are presented. It is suggested that dislocations on the interfaces can contribute to low contact resistance.

Original languageEnglish (US)
Pages (from-to)135-144
Number of pages10
JournalUltramicroscopy
Volume14
Issue number1-2
DOIs
StatePublished - 1984

Fingerprint

Contact resistance
Electron microscopy
electric contacts
electron microscopy
contact resistance
Ohmic contacts
Semiconductor materials
gallium arsenide

ASJC Scopus subject areas

  • Materials Science(all)
  • Instrumentation

Cite this

Electron microscopy study of the AuGe/Ni/Au contacts on GaAs and GaAlAs. / Liliental, Z.; Carpenter, Ray; Escher, J.

In: Ultramicroscopy, Vol. 14, No. 1-2, 1984, p. 135-144.

Research output: Contribution to journalArticle

Liliental, Z. ; Carpenter, Ray ; Escher, J. / Electron microscopy study of the AuGe/Ni/Au contacts on GaAs and GaAlAs. In: Ultramicroscopy. 1984 ; Vol. 14, No. 1-2. pp. 135-144.
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