Electron microscopy studies of epitaxial MgB2 superconducting thin films grown by in situ reactive evaporation

Lin Gu, Brian H. Moeckly, David Smith

Research output: Contribution to journalArticle

10 Scopus citations

Abstract

The morphology and chemistry of epitaxial MgB2 thin films grown using reactive Mg evaporation on different substrates have been characterized by transmission electron microscopy methods. For polycrystalline alumina and sapphire substrates with different surface planes, an MgO transition layer was found at the interface region. No such layer was present for films grown on MgO and 4-H SiC substrates, and none of the MgB2 films had any detectable oxygen incorporation nor MgO inclusions. High-resolution electron microscopy revealed that the growth orientation of the MgB2 thin films was closely related to the substrate orientation and the nature of the intermediary layer. Electrical measurements showed that very low resistivities (several μΩ cm at 300 K) and high superconducting transition temperatures (38 to 40 K) could be achieved. The correlation of electrical properties with film microstructure is briefly discussed.

Original languageEnglish (US)
Pages (from-to)602-611
Number of pages10
JournalJournal of Crystal Growth
Volume280
Issue number3-4
DOIs
StatePublished - Jul 1 2005

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Keywords

  • A1. Characterization
  • A1. Crystal morphology
  • B2. Superconducting materials

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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