TY - JOUR
T1 - Electron microscopy of surface-crater defects on HgCdTe/CdZnTe(211)B epilayers grown by molecular-beam epitaxy
AU - Aoki, T.
AU - Chang, Y.
AU - Badano, G.
AU - Zhao, J.
AU - Grein, C.
AU - Sivananthan, S.
AU - Smith, David
N1 - Funding Information:
This work was supported by the DoD Multidisciplinary University Research Initiative (MURI) Program administered by the Army Research Office under Grant No. DAAD-19-01-1-0462 and monitored by Dr. W. Clark. We acknowledge the use of the facilities in the Center for High Resolution Electron Microscopy at Arizona State University.
PY - 2003/7
Y1 - 2003/7
N2 - Surface-void defects observed in Hg1-xCdxTe (x ∼ 0.2-0.4) alloys grown by molecular-beam epitaxy (MBE) have been investigated using scanning and high-resolution transmission-electron microscopy (HRTEM) as well as atomic force microscopy (AFM). These surface craters, which have been attributed to Hg-deficient growth conditions, were found to originate primarily within the HgCdTe epilayer, rather than at the CdZnTe substrate, and they were associated with the local development of polycrystalline morphology. High-resolution observations established the occurrence of finely spaced HgCdTe/Te inter-growths with semicoherent and incoherent grain boundaries, as well as small HgCdTe inclusions embedded within the Te grains. This study is the first time that high-resolution electron microscopy has been used to investigate this type of defect.
AB - Surface-void defects observed in Hg1-xCdxTe (x ∼ 0.2-0.4) alloys grown by molecular-beam epitaxy (MBE) have been investigated using scanning and high-resolution transmission-electron microscopy (HRTEM) as well as atomic force microscopy (AFM). These surface craters, which have been attributed to Hg-deficient growth conditions, were found to originate primarily within the HgCdTe epilayer, rather than at the CdZnTe substrate, and they were associated with the local development of polycrystalline morphology. High-resolution observations established the occurrence of finely spaced HgCdTe/Te inter-growths with semicoherent and incoherent grain boundaries, as well as small HgCdTe inclusions embedded within the Te grains. This study is the first time that high-resolution electron microscopy has been used to investigate this type of defect.
KW - HgCdTe
KW - High-resolution electron microscopy
KW - Molecular-beam epitaxy (MBE)
KW - Surface-crater defects
UR - http://www.scopus.com/inward/record.url?scp=0043269229&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0043269229&partnerID=8YFLogxK
U2 - 10.1007/s11664-003-0056-8
DO - 10.1007/s11664-003-0056-8
M3 - Article
AN - SCOPUS:0043269229
VL - 32
SP - 703
EP - 709
JO - Journal of Electronic Materials
JF - Journal of Electronic Materials
SN - 0361-5235
IS - 7
ER -