Electron microscopy of surface-crater defects on HgCdTe/CdZnTe(211)B epilayers grown by molecular-beam epitaxy

T. Aoki; Y. Chang; G. Badano; J. Zhao; C. Grein; S. Sivananthan; David Smith

doi:10.1007/s11664-003-0056-8

Electron microscopy of surface-crater defects on HgCdTe/CdZnTe(211)B epilayers grown by molecular-beam epitaxy

T. Aoki, Y. Chang, G. Badano, J. Zhao, C. Grein, S. Sivananthan, David Smith

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

Surface-void defects observed in Hg_1-xCd_xTe (x ∼ 0.2-0.4) alloys grown by molecular-beam epitaxy (MBE) have been investigated using scanning and high-resolution transmission-electron microscopy (HRTEM) as well as atomic force microscopy (AFM). These surface craters, which have been attributed to Hg-deficient growth conditions, were found to originate primarily within the HgCdTe epilayer, rather than at the CdZnTe substrate, and they were associated with the local development of polycrystalline morphology. High-resolution observations established the occurrence of finely spaced HgCdTe/Te inter-growths with semicoherent and incoherent grain boundaries, as well as small HgCdTe inclusions embedded within the Te grains. This study is the first time that high-resolution electron microscopy has been used to investigate this type of defect.

Original language	English (US)
Pages (from-to)	703-709
Number of pages	7
Journal	Journal of Electronic Materials
Volume	32
Issue number	7
DOIs	https://doi.org/10.1007/s11664-003-0056-8
State	Published - Jul 2003

Keywords

HgCdTe
High-resolution electron microscopy
Molecular-beam epitaxy (MBE)
Surface-crater defects

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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title = "Electron microscopy of surface-crater defects on HgCdTe/CdZnTe(211)B epilayers grown by molecular-beam epitaxy",

abstract = "Surface-void defects observed in Hg1-xCdxTe (x ∼ 0.2-0.4) alloys grown by molecular-beam epitaxy (MBE) have been investigated using scanning and high-resolution transmission-electron microscopy (HRTEM) as well as atomic force microscopy (AFM). These surface craters, which have been attributed to Hg-deficient growth conditions, were found to originate primarily within the HgCdTe epilayer, rather than at the CdZnTe substrate, and they were associated with the local development of polycrystalline morphology. High-resolution observations established the occurrence of finely spaced HgCdTe/Te inter-growths with semicoherent and incoherent grain boundaries, as well as small HgCdTe inclusions embedded within the Te grains. This study is the first time that high-resolution electron microscopy has been used to investigate this type of defect.",

keywords = "HgCdTe, High-resolution electron microscopy, Molecular-beam epitaxy (MBE), Surface-crater defects",

author = "T. Aoki and Y. Chang and G. Badano and J. Zhao and C. Grein and S. Sivananthan and David Smith",

year = "2003",

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language = "English (US)",

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TY - JOUR

T1 - Electron microscopy of surface-crater defects on HgCdTe/CdZnTe(211)B epilayers grown by molecular-beam epitaxy

AU - Aoki, T.

AU - Chang, Y.

AU - Badano, G.

AU - Zhao, J.

AU - Grein, C.

AU - Sivananthan, S.

AU - Smith, David

PY - 2003/7

Y1 - 2003/7

N2 - Surface-void defects observed in Hg1-xCdxTe (x ∼ 0.2-0.4) alloys grown by molecular-beam epitaxy (MBE) have been investigated using scanning and high-resolution transmission-electron microscopy (HRTEM) as well as atomic force microscopy (AFM). These surface craters, which have been attributed to Hg-deficient growth conditions, were found to originate primarily within the HgCdTe epilayer, rather than at the CdZnTe substrate, and they were associated with the local development of polycrystalline morphology. High-resolution observations established the occurrence of finely spaced HgCdTe/Te inter-growths with semicoherent and incoherent grain boundaries, as well as small HgCdTe inclusions embedded within the Te grains. This study is the first time that high-resolution electron microscopy has been used to investigate this type of defect.

AB - Surface-void defects observed in Hg1-xCdxTe (x ∼ 0.2-0.4) alloys grown by molecular-beam epitaxy (MBE) have been investigated using scanning and high-resolution transmission-electron microscopy (HRTEM) as well as atomic force microscopy (AFM). These surface craters, which have been attributed to Hg-deficient growth conditions, were found to originate primarily within the HgCdTe epilayer, rather than at the CdZnTe substrate, and they were associated with the local development of polycrystalline morphology. High-resolution observations established the occurrence of finely spaced HgCdTe/Te inter-growths with semicoherent and incoherent grain boundaries, as well as small HgCdTe inclusions embedded within the Te grains. This study is the first time that high-resolution electron microscopy has been used to investigate this type of defect.

KW - HgCdTe

KW - High-resolution electron microscopy

KW - Molecular-beam epitaxy (MBE)

KW - Surface-crater defects

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JF - Journal of Electronic Materials

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