Abstract
Surface-void defects observed in Hg1-xCdxTe (x ∼ 0.2-0.4) alloys grown by molecular-beam epitaxy (MBE) have been investigated using scanning and high-resolution transmission-electron microscopy (HRTEM) as well as atomic force microscopy (AFM). These surface craters, which have been attributed to Hg-deficient growth conditions, were found to originate primarily within the HgCdTe epilayer, rather than at the CdZnTe substrate, and they were associated with the local development of polycrystalline morphology. High-resolution observations established the occurrence of finely spaced HgCdTe/Te inter-growths with semicoherent and incoherent grain boundaries, as well as small HgCdTe inclusions embedded within the Te grains. This study is the first time that high-resolution electron microscopy has been used to investigate this type of defect.
Original language | English (US) |
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Pages (from-to) | 703-709 |
Number of pages | 7 |
Journal | Journal of Electronic Materials |
Volume | 32 |
Issue number | 7 |
DOIs | |
State | Published - Jul 2003 |
Keywords
- HgCdTe
- High-resolution electron microscopy
- Molecular-beam epitaxy (MBE)
- Surface-crater defects
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry