Electron microscopy of surface-crater defects on HgCdTe/CdZnTe(211)B epilayers grown by molecular-beam epitaxy

T. Aoki, Y. Chang, G. Badano, J. Zhao, C. Grein, S. Sivananthan, David Smith

Research output: Contribution to journalArticle

22 Scopus citations

Abstract

Surface-void defects observed in Hg1-xCdxTe (x ∼ 0.2-0.4) alloys grown by molecular-beam epitaxy (MBE) have been investigated using scanning and high-resolution transmission-electron microscopy (HRTEM) as well as atomic force microscopy (AFM). These surface craters, which have been attributed to Hg-deficient growth conditions, were found to originate primarily within the HgCdTe epilayer, rather than at the CdZnTe substrate, and they were associated with the local development of polycrystalline morphology. High-resolution observations established the occurrence of finely spaced HgCdTe/Te inter-growths with semicoherent and incoherent grain boundaries, as well as small HgCdTe inclusions embedded within the Te grains. This study is the first time that high-resolution electron microscopy has been used to investigate this type of defect.

Original languageEnglish (US)
Pages (from-to)703-709
Number of pages7
JournalJournal of Electronic Materials
Volume32
Issue number7
DOIs
StatePublished - Jul 2003

Keywords

  • HgCdTe
  • High-resolution electron microscopy
  • Molecular-beam epitaxy (MBE)
  • Surface-crater defects

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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