Electron microscopy characterization of GaN films grown by molecular-beam epitaxy on sapphire and SiC

Engineering & Materials Science

• Molecular beam epitaxy 100%
• Sapphire 86%
• Electron microscopy 83%
• Characterization (materials science) 56%
• Defects 44%
• Substrates 22%
• Lattice mismatch 19%
• Epitaxial films 16%
• Stacking faults 15%
• Stoichiometry 14%
• Image resolution 11%
• Atoms 11%
• Transmission electron microscopy 11%
• Aluminum oxide 10%

Physics & Astronomy

• electron microscopy 55%
• molecular beam epitaxy 54%
• sapphire 54%
• characterization 35%
• defects 35%
• wurtzite 10%
• crystal defects 10%
• stoichiometry 10%
• transmission electron microscopy 7%
• high resolution 6%
• atoms 5%