Electron microscopy and photoluminescence studies of GaAs/ AlxGa1-xAs quantum wells

Tiwen Fan, Yonghang Zhang, Yiping Zeng, Lianghui Chen, Tung Hsu

Research output: Contribution to journalArticle


Using XTEM, REM and PL, the effect of structural quality on the optoelectronic properties of GaAs/AlxGa1-xAs quantum wells grown by MBE has been studied. In addition, the experimental results reveal that the flatness of interfaces in heterostructures can be improved by MBE technique.

Original languageEnglish (US)
Pages (from-to)706-708
Number of pages3
JournalPan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors
Issue number9
StatePublished - Sep 1 1990


ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this