Electron microscopy and photoluminescence studies of GaAs/ AlxGa1-xAs quantum wells

Tiwen Fan; Yonghang Zhang; Yiping Zeng; Lianghui Chen; Tung Hsu

Electron microscopy and photoluminescence studies of GaAs/ Al_xGa_1-xAs quantum wells

Tiwen Fan, Yonghang Zhang, Yiping Zeng, Lianghui Chen, Tung Hsu

Research output: Contribution to journal › Article › peer-review

Abstract

Using XTEM, REM and PL, the effect of structural quality on the optoelectronic properties of GaAs/Al_xGa_1-xAs quantum wells grown by MBE has been studied. In addition, the experimental results reveal that the flatness of interfaces in heterostructures can be improved by MBE technique.

Original language	English (US)
Pages (from-to)	706-708
Number of pages	3
Journal	Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors
Volume	11
Issue number	9
State	Published - Sep 1990
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Cite this

@article{0dff9dedb25640d9aa52896283fcf050,

title = "Electron microscopy and photoluminescence studies of GaAs/ AlxGa1-xAs quantum wells",

abstract = "Using XTEM, REM and PL, the effect of structural quality on the optoelectronic properties of GaAs/AlxGa1-xAs quantum wells grown by MBE has been studied. In addition, the experimental results reveal that the flatness of interfaces in heterostructures can be improved by MBE technique.",

author = "Tiwen Fan and Yonghang Zhang and Yiping Zeng and Lianghui Chen and Tung Hsu",

year = "1990",

month = sep,

language = "English (US)",

volume = "11",

pages = "706--708",

journal = "Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors",

issn = "0253-4177",

publisher = "Kexue Chubaneshe/Science Press",

number = "9",

}

TY - JOUR

T1 - Electron microscopy and photoluminescence studies of GaAs/ AlxGa1-xAs quantum wells

AU - Fan, Tiwen

AU - Zhang, Yonghang

AU - Zeng, Yiping

AU - Chen, Lianghui

AU - Hsu, Tung

PY - 1990/9

Y1 - 1990/9

N2 - Using XTEM, REM and PL, the effect of structural quality on the optoelectronic properties of GaAs/AlxGa1-xAs quantum wells grown by MBE has been studied. In addition, the experimental results reveal that the flatness of interfaces in heterostructures can be improved by MBE technique.

AB - Using XTEM, REM and PL, the effect of structural quality on the optoelectronic properties of GaAs/AlxGa1-xAs quantum wells grown by MBE has been studied. In addition, the experimental results reveal that the flatness of interfaces in heterostructures can be improved by MBE technique.

UR - http://www.scopus.com/inward/record.url?scp=0025494349&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0025494349&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0025494349

SN - 0253-4177

VL - 11

SP - 706

EP - 708

JO - Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

JF - Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

IS - 9

ER -

Electron microscopy and photoluminescence studies of GaAs/ Al_xGa_1-xAs quantum wells

Abstract

ASJC Scopus subject areas

Other files and links

Fingerprint

Cite this