Electron microdiffraction studies of new SiO2 precipitates in silicon

Y. Kim, John Spence, N. Long, W. Bergholz, M. O'Keeffe

Research output: Contribution to journalArticle

Abstract

Coherent electron microdiffraction patterns have been obtained from a new crystalline precipitate found in silicon wafers annealed at 635 °C for 256 h. On the basis of the experimental evidence presented, the most likely structure is that of keatite (SiO2, tetragonal). The implications for the study of oxygen precipitation in silicon are discussed.

Original languageEnglish (US)
Pages (from-to)419-422
Number of pages4
JournalJournal of Applied Physics
Volume62
Issue number2
DOIs
StatePublished - Dec 1 1987

    Fingerprint

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this