Electron microdiffraction studies of new SiO2 precipitates in silicon

Y. Kim; John Spence; N. Long; W. Bergholz; M. O'Keeffe

doi:10.1063/1.339814

Electron microdiffraction studies of new SiO₂ precipitates in silicon

Y. Kim, John Spence, N. Long, W. Bergholz, M. O'Keeffe

Physics

Research output: Contribution to journal › Article › peer-review

Abstract

Coherent electron microdiffraction patterns have been obtained from a new crystalline precipitate found in silicon wafers annealed at 635 °C for 256 h. On the basis of the experimental evidence presented, the most likely structure is that of keatite (SiO₂, tetragonal). The implications for the study of oxygen precipitation in silicon are discussed.

Original language	English (US)
Pages (from-to)	419-422
Number of pages	4
Journal	Journal of Applied Physics
Volume	62
Issue number	2
DOIs	https://doi.org/10.1063/1.339814
State	Published - 1987

ASJC Scopus subject areas

General Physics and Astronomy

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10.1063/1.339814

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title = "Electron microdiffraction studies of new SiO2 precipitates in silicon",

abstract = "Coherent electron microdiffraction patterns have been obtained from a new crystalline precipitate found in silicon wafers annealed at 635 °C for 256 h. On the basis of the experimental evidence presented, the most likely structure is that of keatite (SiO2, tetragonal). The implications for the study of oxygen precipitation in silicon are discussed.",

author = "Y. Kim and John Spence and N. Long and W. Bergholz and M. O'Keeffe",

year = "1987",

doi = "10.1063/1.339814",

language = "English (US)",

volume = "62",

pages = "419--422",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "2",

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T1 - Electron microdiffraction studies of new SiO2 precipitates in silicon

AU - Kim, Y.

AU - Spence, John

AU - Long, N.

AU - Bergholz, W.

AU - O'Keeffe, M.

PY - 1987

Y1 - 1987

N2 - Coherent electron microdiffraction patterns have been obtained from a new crystalline precipitate found in silicon wafers annealed at 635 °C for 256 h. On the basis of the experimental evidence presented, the most likely structure is that of keatite (SiO2, tetragonal). The implications for the study of oxygen precipitation in silicon are discussed.

AB - Coherent electron microdiffraction patterns have been obtained from a new crystalline precipitate found in silicon wafers annealed at 635 °C for 256 h. On the basis of the experimental evidence presented, the most likely structure is that of keatite (SiO2, tetragonal). The implications for the study of oxygen precipitation in silicon are discussed.

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U2 - 10.1063/1.339814

DO - 10.1063/1.339814

M3 - Article

AN - SCOPUS:36549091391

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EP - 422

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 2

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Electron microdiffraction studies of new SiO₂ precipitates in silicon

Abstract

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