Electron heating effect on transport properties in Si SiGe modulation doped structures grown by gas source molecular beam epitaxy

Engineering & Materials Science

• Gas source molecular beam epitaxy 100%
• Electron transport properties 92%
• Magnetoresistance 73%
• Galvanomagnetic effects 48%
• Electrons 46%
• Two dimensional electron gas 40%
• Electron temperature 40%
• Electron mobility 36%
• Modulation 35%
• Damping 35%
• Heating 33%
• Electric fields 21%
• Energy dissipation 19%
• Temperature 9%

Physics & Astronomy

• molecular beam epitaxy 39%
• transport properties 36%
• modulation 30%
• oscillations 29%
• heating 29%
• damping 24%
• gases 23%
• electrons 19%
• electron mobility 15%
• electron gas 14%
• energy dissipation 12%
• electron energy 11%
• electric fields 9%

Chemical Compounds

• Molecular Beam Epitaxy 66%
• Transport Property 43%
• Magnetoresistance 42%
• Two-Dimensional Electron Gas 27%
• Electron Particle 24%
• Gas 24%
• Electron Temperature 23%
• Electron Mobility 18%
• Electric Field 13%
• Energy 7%