Electron heating effect on transport properties in Si SiGe modulation doped structures grown by gas source molecular beam epitaxy

A. Matsumura; T. J. Thornton; J. M. Fernández; S. N. Holmes; J. Zhang; B. A. Joyce

doi:10.1016/0022-0248(95)00357-6

Electron heating effect on transport properties in Si SiGe modulation doped structures grown by gas source molecular beam epitaxy

A. Matsumura, T. J. Thornton, J. M. Fernández, S. N. Holmes, J. Zhang, B. A. Joyce

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

We have grown Si SiGe modulation doped structures by gas source molecular beam epitaxy. Magnetotransport measurements were carried out on Hall bar structures at 0.4 K. Pronounced Shubnikov-de Haas oscillations were observed in the longitudinal magnetoresistance, indicative of a high quality two-dimensional electron gas in the Si channel. Electron mobilities up to 95 000 cm²/V · s with sheet densities of about 8 × 10¹¹ cm^-2 were obtained at low temperature. The oscillations in the magnetoresistance showed obvious damping as the electric field applied to the Hall bar was increased, indicating an effect of electron heating. Electron temperatures were derived from the oscillation ampitude damping and examined as a function of energy loss rate, which can be determined from the input power per electron in the steady state.

Original language	English (US)
Pages (from-to)	373-377
Number of pages	5
Journal	Journal of Crystal Growth
Volume	157
Issue number	1-4
DOIs	https://doi.org/10.1016/0022-0248(95)00357-6
State	Published - Dec 2 1995
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/0022-0248(95)00357-6

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@article{e5a07e25e4174a728b7df89042e00a40,

title = "Electron heating effect on transport properties in Si SiGe modulation doped structures grown by gas source molecular beam epitaxy",

abstract = "We have grown Si SiGe modulation doped structures by gas source molecular beam epitaxy. Magnetotransport measurements were carried out on Hall bar structures at 0.4 K. Pronounced Shubnikov-de Haas oscillations were observed in the longitudinal magnetoresistance, indicative of a high quality two-dimensional electron gas in the Si channel. Electron mobilities up to 95 000 cm2/V · s with sheet densities of about 8 × 1011 cm-2 were obtained at low temperature. The oscillations in the magnetoresistance showed obvious damping as the electric field applied to the Hall bar was increased, indicating an effect of electron heating. Electron temperatures were derived from the oscillation ampitude damping and examined as a function of energy loss rate, which can be determined from the input power per electron in the steady state.",

author = "A. Matsumura and Thornton, {T. J.} and Fern{\'a}ndez, {J. M.} and Holmes, {S. N.} and J. Zhang and Joyce, {B. A.}",

note = "Funding Information: One of the authors( J.M.F.) wishes to acknowledge financial supportt hrougha EuropeanU nion Human Capital and Mobility Fellowship( ERBCH-BIT941337).",

year = "1995",

month = dec,

day = "2",

doi = "10.1016/0022-0248(95)00357-6",

language = "English (US)",

volume = "157",

pages = "373--377",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

number = "1-4",

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TY - JOUR

T1 - Electron heating effect on transport properties in Si SiGe modulation doped structures grown by gas source molecular beam epitaxy

AU - Matsumura, A.

AU - Thornton, T. J.

AU - Fernández, J. M.

AU - Holmes, S. N.

AU - Zhang, J.

AU - Joyce, B. A.

N1 - Funding Information: One of the authors( J.M.F.) wishes to acknowledge financial supportt hrougha EuropeanU nion Human Capital and Mobility Fellowship( ERBCH-BIT941337).

PY - 1995/12/2

Y1 - 1995/12/2

N2 - We have grown Si SiGe modulation doped structures by gas source molecular beam epitaxy. Magnetotransport measurements were carried out on Hall bar structures at 0.4 K. Pronounced Shubnikov-de Haas oscillations were observed in the longitudinal magnetoresistance, indicative of a high quality two-dimensional electron gas in the Si channel. Electron mobilities up to 95 000 cm2/V · s with sheet densities of about 8 × 1011 cm-2 were obtained at low temperature. The oscillations in the magnetoresistance showed obvious damping as the electric field applied to the Hall bar was increased, indicating an effect of electron heating. Electron temperatures were derived from the oscillation ampitude damping and examined as a function of energy loss rate, which can be determined from the input power per electron in the steady state.

AB - We have grown Si SiGe modulation doped structures by gas source molecular beam epitaxy. Magnetotransport measurements were carried out on Hall bar structures at 0.4 K. Pronounced Shubnikov-de Haas oscillations were observed in the longitudinal magnetoresistance, indicative of a high quality two-dimensional electron gas in the Si channel. Electron mobilities up to 95 000 cm2/V · s with sheet densities of about 8 × 1011 cm-2 were obtained at low temperature. The oscillations in the magnetoresistance showed obvious damping as the electric field applied to the Hall bar was increased, indicating an effect of electron heating. Electron temperatures were derived from the oscillation ampitude damping and examined as a function of energy loss rate, which can be determined from the input power per electron in the steady state.

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U2 - 10.1016/0022-0248(95)00357-6

DO - 10.1016/0022-0248(95)00357-6

M3 - Article

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SN - 0022-0248

VL - 157

SP - 373

EP - 377

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1-4

ER -

Electron heating effect on transport properties in Si SiGe modulation doped structures grown by gas source molecular beam epitaxy

Abstract

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