Electron heating effect on transport properties in Si SiGe modulation doped structures grown by gas source molecular beam epitaxy

A. Matsumura, T. J. Thornton, J. M. Fernández, S. N. Holmes, J. Zhang, B. A. Joyce

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

We have grown Si SiGe modulation doped structures by gas source molecular beam epitaxy. Magnetotransport measurements were carried out on Hall bar structures at 0.4 K. Pronounced Shubnikov-de Haas oscillations were observed in the longitudinal magnetoresistance, indicative of a high quality two-dimensional electron gas in the Si channel. Electron mobilities up to 95 000 cm2/V · s with sheet densities of about 8 × 1011 cm-2 were obtained at low temperature. The oscillations in the magnetoresistance showed obvious damping as the electric field applied to the Hall bar was increased, indicating an effect of electron heating. Electron temperatures were derived from the oscillation ampitude damping and examined as a function of energy loss rate, which can be determined from the input power per electron in the steady state.

Original languageEnglish (US)
Pages (from-to)373-377
Number of pages5
JournalJournal of Crystal Growth
Volume157
Issue number1-4
DOIs
StatePublished - Dec 2 1995
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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